Phonon and Structural Changes in Deformed Bernal Stacked Bilayer Graphene

Abstract

We present the first Raman spectroscopic study of Bernal bilayer graphene flakes under uniaxial tension. Apart from a purely mechanical behavior in flake regions where both layers are strained evenly, certain effects stem from inhomogeneous stress distribution across the layers. These phenomena such as the removal of inversion symmetry in bilayer graphene may have important implications in the band gap engineering, providing an alternative route to induce the formation of a band gap.

Probing inhomogeneous doping in overlapped graphene grain boundaries by Raman spectroscopy

“…1b for both laser excitations. Splits in the G band in graphene and BLG have been observed previously due to uniaxial strain [39][40][41] or due to charge transfer (doping) [42][43][44][45][46][47][48][49][50].…”

“…The D band in the spectrum measured with E laser = 2.33 eV cannot be distinguished clearly due to the higher background noise. In addition to the absence of a D band, the strain-induced split components of the G band should have similar linewidths, albeit broader lineshapes compared to the G band from un-strained graphene [40,41]. The spectra in Fig.…”

Reinforcement in melt-processed polymer–graphene composites at extremely low graphene loading level

“…Among its other superlative properties [1][2][3], graphene is the strongest material known to man [4]. As a result, it has long been known that graphene has the potential to be a superlative filler in reinforced composites.…”

In situ Raman spectroelectrochemistry of graphene oxide

“…In pristine graphene, Raman spectroscopy can distinguish the number of layers [26], their doping [27,28] or strain [29]. In defective sp 2 -based materials, Raman spectra can provide qualitative information on the disorder degree [21,30], and with some caution even quantitative data on the crystallite sizes can be obtained [21,[30][31][32][33][34].…”