2014
DOI: 10.1021/jp411815w
|View full text |Cite
|
Sign up to set email alerts
|

Phenyl- and Thienyl-Ended Symmetric Azomethines and Azines as Model Compounds for n-Channel Organic Field-Effect Transistors: An Electrochemical and Computational Study

Abstract: The formation energy and stability of radical anions in a series of 12 phenyl- and 2-thienyl-ended linear, symmetric azomethines and azines were investigated by cyclic voltammetry. Replacing 1,4-phenylene with 2,5-thienylene cores and substitution with cyano or methyl moieties have allowed the lowering of lowest unoccupied molecular orbital energy levels even by 1 eV. Methyl capping stabilizes electron carriers (radical anions) toward dimerization, and the mechanism of such radical anion dimerization has been … Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1
1
1

Citation Types

3
21
0

Year Published

2015
2015
2022
2022

Publication Types

Select...
7

Relationship

1
6

Authors

Journals

citations
Cited by 31 publications
(25 citation statements)
references
References 41 publications
3
21
0
Order By: Relevance
“…The radical anions generated in the course of the CV experiment are unstable and are easily protonated owing to their high basicity. A similar shift to the anodic region was observed previously for azines with aryl and heterocyclic substituents , …”
Section: Resultssupporting
confidence: 86%
“…The radical anions generated in the course of the CV experiment are unstable and are easily protonated owing to their high basicity. A similar shift to the anodic region was observed previously for azines with aryl and heterocyclic substituents , …”
Section: Resultssupporting
confidence: 86%
“…The HOMO and LUMO levels of P1 , P2 , and P3 were obtained from the onsets of the oxidation and reduction potential [ 44 ], respectively, and are reported in Table 1 together with UV−vis spectroscopic data. The deviation between the optical and electrochemical results are in quite satisfactory agreement, as previously described in literature [ 45 ].…”
Section: Resultssupporting
confidence: 89%
“…They have many intrinsic advantages, i.e., well-elucidated molecular structures, molecular weights, high purity, and good charge-carrier mobility. 15 The performance of OFETs mainly depends on the structural characteristics of the active semiconducting material as well as the processing method employed during thin-film fabrication. 24 To reduce the fabrication cost for large-area manufacturing, implementation of solution process techniques like spin coating, blade coating, and inkjet printing are more favorable compared to vacuum deposition methods.…”
Section: Introductionmentioning
confidence: 99%