Phase Transitions in Silicon-Carbide Epitaxial Layers Grown on a Silicon Substrate by the Method of the Coordinated Substitution of Atoms

Spintronic properties of the interface between Si(111) and 3C-SiC(111) grown by the method of coordinated substitution of atoms

“…In addition, particular features of the longitudinal electrical resistance of this system were found at the same temperatures as those corresponding to thermal capacity jumps [9]. This was interpreted in [9] as phase transitions in the electron subsystem. All these experimental results need to be substantiated theoretically.…”

“…These data yield the following estimate of the Curie point in the mean field approximation: T C ∼ 2000 • C [15]. It is conceivable that the unusual electrical, optical, and magnetic properties (the anomalous magnetic susceptibility included), which are observed in these samples specifically in the interface plane [8,9], are related to the spintronic characteristics of the 3C-SiC(111)/Si(111) interface.…”

“…Further experimental studies demonstrated that an MCSA 3C-SiC(111)/Si(111) interface features anomalous magnetic properties [8] that may be utilized both for absorption and for emission of electromagnetic waves in the terahertz range [8,9]. In addition, particular features of the longitudinal electrical resistance of this system were found at the same temperatures as those corresponding to thermal capacity jumps [9].…”