Phase transitions and optical absorption edge in CuInP2Se6 layered ferrielectrics

Studenyak, I. P.; Mykajlo, O.; Stephanovich, V. A.; Гурзан, М. І.; Vysochanskiǐ, Yu. M.; Cajipe, V.B.

doi:10.1002/pssa.200306637

Cited by 13 publications

(7 citation statements)

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“…CuVP 2 S 6 is possibly paramagnetic despite weak ferromagnetic signals . Cu‐contained mixed metal thio/selenophosphates (M I M II P 2 X 6 , M I = Cu, M II = Cr, V, In, X = S, Se) have FE properties originated from the Cu + site ordering at different temperatures . Possible Cu + sites in the Cu‐contained M I M II P 2 X 6 are S 6 octahedral center, off‐octahedron‐center site, S 3 triangle center within the sulfur planes and interlayer sites .…”

Section: Potential 2d Phase‐transition Materialsmentioning

confidence: 99%

Potential 2D Materials with Phase Transitions: Structure, Synthesis, and Device Applications

et al. 2018

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bandgap can overcome the short channel effect, and then can scale down transistors to sub-10 nm [13,14] and even sub-5 nm [10,[15][16][17][18] to extend the Moore's law. Over last decades, typical 2D semiconductors, such as MoS 2 and WSe 2 , have been intensively studied. [19][20][21][22] On the other hand, 2D materials with versatile phase-transition properties offer new opportunities in both fundamental research and future device applications. In the last few years, a lot of exciting experiments have been conducted on this subfamily of 2D materials in the monolayer limit, such as charge density wave (CDW) 1T-TaS 2 , [23][24][25][26] superconducting (SC) 2H-NbSe 2 , [27][28][29] ferromagnetic (FM) CrI 3 , [12,30,31] and Cr 2 Ge 2 Te 6 . [11,32] CDW is a phenomenon of forming a standing-wave-like electron density usually accompanied with a lattice distortion and a bandgap opening due to electronphonon interaction. [33] SC is a phenomenon of zero electrical resistance and expulsion of magnetic flux fields also originated from electron-phonon interaction. [34] Magnetism and electric polarization stem from spontaneous spin/dipole ordering, respectively. [35,36] Parallel and antiparallel spins constitute long-range ferromagnetic (FM) and antiferromagnetic (AFM) ordering, respectively. Similarly, parallel and antiparallel dipoles form ferroelectric (FE) and antiferroelectric (AFE) ordering, respectively. Van der Waals layered materials can show a lot of novel properties, especially in the atomic thickness limit. This includes the follow ing terms: (1) The odd/even layer effect may emerge due to weak interlayer coupling. For example, FM or FE ordering may appear in the odd layers, while AFM or AFE ordering may appear in the even layers; (2) Due to confinement effect in the out-of-plane direction, new ordering structures may appear;(3) The properties can be easily tuned by strain, external fields, interface interaction, and so on. Toward fundamental property measurement and device applications, the challenge remains, such as predicting/discovering new 2D phase-transition materials, controlling the chemical synthesis, overcoming the poor air stability, and so on. Here, a literature survey has been carried out to search possible 2D phase-transition materials. Recent progress on the chemical synthesis and property investigation of some obtained monolayers has been reviewed, including CDW 1T-TaS 2 monolayers, FM CrI 3 mono layers, and so on.Layered materials with phase transitions, such as charge density wave (CDW) and magnetic and dipole ordering, have potential to be exfoliated into monolayers and few-layers and then become a large and important subfamily of two-dimensional (2D) materials. Benefitting from enriched physical properties from the collective interactions, long-range ordering, and related phase transitions, as well as the atomic thickness yet having nondangling bonds on the surface, 2D phase-transition materials have vast potential for use in new-concept and functional devices. Here, potential 2D phase-transit...

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Section: Potential 2d Phase‐transition Materialsmentioning

confidence: 99%

Potential 2D Materials with Phase Transitions: Structure, Synthesis, and Device Applications

et al. 2018

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“…9−13 CuCrP 2 S 6 has different convergence points in the antiferroelectric and paraelectric phases, and electric field can be used to drive ferroelectricity in a single layer or even several layers. 14,15 Three phase transitions were observed at low temperatures (30.45, 154.96, and 185.92 K). The origin of phase transition is the magnetic origin caused by the spin of chromium and the positional disorder of Cu+ ions.…”

Section: ■ Introductionmentioning

confidence: 99%

Abnormal Evolution of a Layered Structure and Band Gap in AgInP₂S₆ under Compression

et al. 2022

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van der Waals layered materials are extremely sensitive to the effect of pressure, which can lead to many novel properties. Hence, we apply ultraviolet (UV) optical absorbance, Raman spectroscopy, X-ray diffraction, and first-principles calculations to study the influence of pressure-induced interlayered structure, bandgap evolution of AgInP 2 S 6 . The results show the abnormal band gap evolution in compression, which is related to the bond stretching of sulfur in AgInP 2 S 6 . For the AgInP 2 S 6 structure, the XRD and calculations reveal that there is no structure transition in compression until 50 GPa. Furthermore, we also find the layer angle has a peculiar rotation coincidence with the abnormal band gap evolution from 0 to 30 GPa because of the S−P−S bond. These observations not only provide the understanding of the mechanism by which chemical bond angles induced the changes in the interlayer structure but also expand the promising exploration of more [P 2 S 6 ] 4− -based functional ceramics photoelectric applications.

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“…Layered crystals belonging to the M1M2P 2 X 6 (M1, M2metal cations, Xchalcogen) family are promising materials for functional electronics, because many of them exhibit ferroelectric, ferro-or antiferromagnetic as well as piezoelectric properties. 1 They exhibit mixed electron-ionic conductivity [2][3][4] and promising optical 5,6 and thermoelectric properties. 7 Therefore, these layered crystals are interesting from the fundamental point of view and also they are important materials for practical as well as for technological applications.…”

Section: Introductionmentioning

confidence: 99%

Structural, electronic, vibration and elastic properties of the layered AgInP₂S₆semiconducting crystal – DFT approach

et al. 2018

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Phase transitions and optical absorption edge in CuInP2Se6 layered ferrielectrics

Cited by 13 publications

References 0 publications

Potential 2D Materials with Phase Transitions: Structure, Synthesis, and Device Applications

Potential 2D Materials with Phase Transitions: Structure, Synthesis, and Device Applications

Abnormal Evolution of a Layered Structure and Band Gap in AgInP₂S₆ under Compression

Structural, electronic, vibration and elastic properties of the layered AgInP₂S₆semiconducting crystal – DFT approach

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Phase transitions and optical absorption edge in CuInP2Se6 layered ferrielectrics

Cited by 13 publications

References 0 publications

Potential 2D Materials with Phase Transitions: Structure, Synthesis, and Device Applications

Potential 2D Materials with Phase Transitions: Structure, Synthesis, and Device Applications

Abnormal Evolution of a Layered Structure and Band Gap in AgInP2S6 under Compression

Structural, electronic, vibration and elastic properties of the layered AgInP2S6semiconducting crystal – DFT approach

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Abnormal Evolution of a Layered Structure and Band Gap in AgInP₂S₆ under Compression

Structural, electronic, vibration and elastic properties of the layered AgInP₂S₆semiconducting crystal – DFT approach