Phase transitions and electrical behavior of lead-free (K0.50Na0.50)NbO3 thin film

Abstract

Enhanced ferroelectric properties in Mn-doped K 0.5 Na 0.5 NbO 3 thin films derived from chemical solution deposition Appl. Phys. Lett. 97, 072902 (2010); 10.1063/1.3479530 Piezoresponse and ferroelectric properties of lead-free [ Bi 0.5 ( Na 0.7 K 0.2 Li 0.1 ) 0.5 ] Ti O 3 thin films by pulsed laser deposition Appl. Phys. Lett. 92, 222909 (2008); 10.1063/1.2938364 Dielectric and ferroelectric properties of strain-relieved epitaxial lead-free KNN-LT-LS ferroelectric thin films on Sr Ti O 3 substrates

Lead-free (K, Na)NbO3 ferroelectric thin films: Preparation, structure and electrical properties

“…To obtain KNN thin films of high quality, many preparation techniques such as rf-magnetron sputtering [14,15], pulsed laser deposition (PLD) [16,17], metal-organic chemical vapor deposition (MOCVD) [18] and sol-gel methods [19][20][21] have been employed. However, the high volatility both of sodium and potassium complicates the fabrication of KNN thin films by physical vapor deposition processes [22,23].…”

Lead-Free KNN-Based Piezoelectric Materials

“…They also reported that the KNN film possesses good fatigue endurance with a consistent polarization up to 10 9 switching cycles. The phase transition temperature for the orthorhombic-tetragonal and the tetragonal-cubic are reported to be 120 C and 310 C, respectively [91]. Shibata et al reported e 31 in the range of À3.6 to À5.5 C m À2 for the KNN thick films of 3 mm on (100)Pt/MgO and (111)Pt/Ti/SiO 2 /Si substrates [92].…”

“…At low electric fields, ohmic conduction contributes to the leakage current of Mn-modified thin films. Ohmic conduction has also been reported to be the prevailing mechanism for KNN films made by the sputtering technique [91]. At higher electric fields, the mechanism changes to modified Child's conduction, followed by a steep rise in the Log J-Log E plot where the trap-field limit (TFL) operates after the complete filling of deep traps [91].…”

“…Wu et al [91] deposited (001)-oriented KNN films on a SrTiO 3 substrate with the remnant polarization and dielectric constant of 12 mC cm À2 and 452 (at 1 kHz), respectively. The films showed higher values of dielectric constant and lower values of dissipation factor and AC conductivity in comparison to the bulk KNN ceramic made by the same research group.…”

Room temperature ferromagnetism and magnetoelectric coupling in (K0.5Na0.5)NbO3 PLD nanocrystalline films

“…Most of the recent researches are focused on the modified KNN ceramics to improve their electrical properties [29][30][31][32][33][34][35]. In addition, many preparation techniques such as magnetron sputtering [36,37], pulsed laser deposition (PLD) [38,39], metal-organic chemical vapor deposition (MOCVD) [40], sol-gel methods [41,42] and chemical solution approach [43], have been employed to obtain KNN thin films with high quality. However, it is difficult to control the stoichiometric composition of the resulting KNN thin films due to the strong volatilization of K and Na during PLD, which, on the other side, can also be utilized to investigate the influence of cation vacancies on the magnetic properties of KNN films.…”