Phase transition of hydrogenated SiGe thin films in plasma-enhanced chemical vapor deposition

Yun, Sun Jin; Kim, Jun Kwan; Lee, Seong Hyun; Lee, Yoo Jeong; Lim, Jung Wook

doi:10.1016/j.tsf.2013.04.071

Cited by 3 publications

(1 citation statement)

References 19 publications

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“…In this study, weak integrated intensity of c-Ge-Ge mode was ignored in the contribution of crystalline column fraction. To obtain a quantified value to compare the degree of crystallization, the was calculated by the ratio of ( + )/( + + ), where the integrated intensities of crystalline ( ), intermediate ( ), and amorphous ( ) Si phases in Raman spectra were used [16,25]. In the plasma of PECVD process, the generation of growth precursor is proportional to the density of energetic electrons which are responsible for the reaction and the dissociation cross section [26].…”

Section: Effect Of Rf Power On the Properties Of C-si 1−x Ge X :Hmentioning

confidence: 99%

Optimization ofμc-Si_1−xGe_x:H Single-Junction Solar Cells with Enhanced Spectral Response and Improved Film Quality

Huang

Chen

et al. 2015

International Journal of Photoenergy

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Effects of RF power on optical, electrical, and structural properties ofμc-Si1−xGex:H films was reported. Raman and FTIR spectra fromμc-Si1−xGex:H films reflected the variation in microstructure and bonding configuration. Unlike increasing the germane concentration for Ge incorporation, low RF power enhanced Ge incorporation efficiency inμc-Si1−xGex:H alloy. By decreasing RF power from 100 to 50 W at a fixed reactant gas ratio, the optical bandgap ofμc-Si1−xGex:H was reduced owing to the increase in Ge content from 11.2 to 23.8 at.%, while Ge-related defects and amorphous phase were increased. Consequently, photo conductivity of 1.62 × 10−5 S/cm was obtained for theμc-Si1−xGex:H film deposited at 60 W. By applying 0.9 μm thickμc-Si1−xGex:H absorber withXCof 48% and [Ge] of 16.4 at.% in the single-junction cell, efficiency of 6.18% was obtained. The long-wavelength response ofμc-Si1−xGex:H cell was significantly enhanced compared with theμc-Si:H cell. In the case of tandem cells, 0.24 μm a-Si:H/0.9 μmμc-Si1−xGex:H tandem cell exhibited a comparable spectral response as 0.24 μm a-Si:H/1.4 μmμc-Si:H tandem cell and achieved an efficiency of 9.44%.

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Section: Effect Of Rf Power On the Properties Of C-si 1−x Ge X :Hmentioning

confidence: 99%

Optimization ofμc-Si_1−xGe_x:H Single-Junction Solar Cells with Enhanced Spectral Response and Improved Film Quality

Huang

Chen

et al. 2015

International Journal of Photoenergy

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Multi-layered hydrogenated p-type microcrystalline silicon windows for a-Si:H thin film solar cells on opaque substrates

Lee

Schropp

et al. 2016

International Journal of Hydrogen Energy

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Effect of Irradiation on Electrical Conduction and Crystallization in Ge1-x Six Films

Mahdavi

Madatov

2014

International Journal of Electrochemical Science

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Phase transition of hydrogenated SiGe thin films in plasma-enhanced chemical vapor deposition

Cited by 3 publications

References 19 publications

Optimization ofμc-Si_1−xGe_x:H Single-Junction Solar Cells with Enhanced Spectral Response and Improved Film Quality

Optimization ofμc-Si_1−xGe_x:H Single-Junction Solar Cells with Enhanced Spectral Response and Improved Film Quality

Multi-layered hydrogenated p-type microcrystalline silicon windows for a-Si:H thin film solar cells on opaque substrates

Effect of Irradiation on Electrical Conduction and Crystallization in Ge1-x Six Films

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Phase transition of hydrogenated SiGe thin films in plasma-enhanced chemical vapor deposition

Cited by 3 publications

References 19 publications

Optimization ofμc-Si1−xGex:H Single-Junction Solar Cells with Enhanced Spectral Response and Improved Film Quality

Optimization ofμc-Si1−xGex:H Single-Junction Solar Cells with Enhanced Spectral Response and Improved Film Quality

Multi-layered hydrogenated p-type microcrystalline silicon windows for a-Si:H thin film solar cells on opaque substrates

Effect of Irradiation on Electrical Conduction and Crystallization in Ge1-x Six Films

Contact Info

Product

Resources

About

Optimization ofμc-Si_1−xGe_x:H Single-Junction Solar Cells with Enhanced Spectral Response and Improved Film Quality

Optimization ofμc-Si_1−xGe_x:H Single-Junction Solar Cells with Enhanced Spectral Response and Improved Film Quality