1980
DOI: 10.1016/0022-4596(80)90538-1
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Phase transition in the family LaxBi4−xTi3O12: In relation to lattice symmetry and distortion

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Cited by 28 publications
(22 citation statements)
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“…Its effects on ferroelectricity in SBN were different from the effects of the other ions which substituted Sr 2+ or Nb 5+ ions in perovskite-like layer. Decrease of T C with La 3+ doping in Bi 3+ sites has already reported in BIT [14]. For the hexa-valent ions of Mo 6+ and W 6+ , these two ions have almost same ion sizes but their effects on T C were very different.…”
Section: Discussionmentioning
confidence: 74%
“…Its effects on ferroelectricity in SBN were different from the effects of the other ions which substituted Sr 2+ or Nb 5+ ions in perovskite-like layer. Decrease of T C with La 3+ doping in Bi 3+ sites has already reported in BIT [14]. For the hexa-valent ions of Mo 6+ and W 6+ , these two ions have almost same ion sizes but their effects on T C were very different.…”
Section: Discussionmentioning
confidence: 74%
“…Rare-earth ion modified BIT (Bi 4−x Ln x Ti 3 O 12 ; Ln=La, Nd, Sm) films were reported to have relatively high ferroelectricity and good fatigue-free characteristics [7][8][9]. The ferroelectric property of the Bi 4−x La x Ti 3 O 12 ceramics differs according to the value of x [3,10]. When the value of x changes from x=0 to x=1.50, the ferroelectric phase transition temperature (T C ) of the Bi 4−x La x Ti 3 O 12 ceramics shifts from 650 to −100°C, as reported by Takenaka and Sakata [3].…”
Section: Introductionmentioning
confidence: 98%
“…BLSF ceramics have the general formula of (Bi 2 O 2 ) 2+ (A m−1 B m O 3m+1 ) 2− , where A=Bi, Pb, Ba, Sr, La, Ca, Na, K; B=Ti, Nb, Ta, W, Mo, Fe, Co, Cr, and m is the number of BO 6 octahedrals in the pseudoperovskite block (m=2, 3, 4, 5) [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16]. Bi 4 Ti 3 O 12 (BIT) is one of the more extensively studied materials among the BLSF family due to its large spontaneous polarization along the a-axis (approximately 50 μC/cm 2 ), [4] low processing temperature, high Curie temperature, and lead-free composition.…”
Section: Introductionmentioning
confidence: 99%
“…Doped BIT is of interest in high-temperature piezoelectric sensors, because it remains ferroelectric at T > 600 °C and offers relatively high piezoelectric property (Kumar, 2001;Nagata, 1999;Noguchi, Sugibuchi, 1975;Shimakawa, 2000;Subbarao, 1961;2000;Shulman, 2000;Shimazu, 1980 2x Nb x Ta x O 12 powders calcined at 800 °C for 4 h were prepared and their crystal structures were analyzed using XRD. Fig.…”
Section: Nb/ta Modified Bi 4 Ti 3 O 12 Ceramicsmentioning
confidence: 99%