Phase transition and possible metallization in CeVO4 under pressure

Garg, Alka B.; Shanavas, K. V.; Wani, B.N.; Sharma, Surinder M.

doi:10.1016/j.jssc.2013.04.036

Cited by 38 publications

(67 citation statements)

References 57 publications

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“…1 up to 15.3 GPa. Beyond this 12 pressure, we observed that the compressibility of the sample is highly reduced, which deviates with the results reported in Ref. 7.…”

Section: Resultscontrasting

confidence: 91%

“…This indicates that pressure-induced decomposition is not prevalent in EuVO 4 up to 34.7 GPa. The other observations are that we did not find either the occurrence of pressure-induced amorphization or color changes in the sample that may indicate pressure-induced metallization as found in CeVO 4 at 11 GPa [12]. We would also like to comment here that it was previously observed, in related compounds including TbVO 4 [13,18], that the scheelite-fergusonite transition pressure depends upon the PTM used in the experiments.…”

Section: Resultsmentioning

confidence: 46%

“…During the last years, several studies have been carried out on the HP behavior of orthovanadates, showing that pressure is an efficient tool to improve the understanding of their physical properties [7,27]. In particular, xray diffraction (XRD) [7,[9][10][11][12][13][14][15], optical [8,16,17], and Raman scattering measurements [18][19][20][21][22] as well as theoretical studies [10, 14 , 22-27] have been carried out to understand the effects of pressure on orthovanadates. From these studies, it was determined that vanadates with small rare-earth cations (Sm and those atoms with smaller ionic radii) transform at HP to the tetragonal scheelite-type structure while those with large cations (Pr and those atoms with a larger ionic radii) transform to the monoclinic monazite-type structure (space group: P2 1 /n, Z = 4).…”

Section: Introductionmentioning

confidence: 99%

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High-pressure powder x-ray diffraction study of EuVO4

Garg

Errandonea

2015

Journal of Solid State Chemistry

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Abstract:The high-pressure structural behavior of europium orthovanadate has been studied using in-situ, synchrotron based, high-pressure x-ray powder diffraction technique. Angle-dispersive x-ray diffraction measurements were carried out at room temperature up to 34.7 GPa using a diamond-anvil cell, extending the pressure range reported in previous experiments. We confirmed the occurrence of zircon-scheelite phase transition at 6.8 GPa and the coexistence of low-and high-pressure phases up to 10.1GPa. In addition, clear evidence of a scheelite-fregusonite transition is found at 23.4 GPa.

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“…1 up to 15.3 GPa. Beyond this 12 pressure, we observed that the compressibility of the sample is highly reduced, which deviates with the results reported in Ref. 7.…”

Section: Resultscontrasting

confidence: 91%

Section: Resultsmentioning

confidence: 46%

Section: Introductionmentioning

confidence: 99%

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High-pressure powder x-ray diffraction study of EuVO4

Garg

Errandonea

2015

Journal of Solid State Chemistry

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“…As we will explain when discussing calculations, this bang-gap change can be correlated with the isomorphic transition previously detected in PbCrO 4 by means of x-ray diffraction experiments (to a HP monazite-type structure) [7]. A similar transition has been also found in other monazites [19,38,39]. Beyond 3.5 GPa the pressure evolution of the absorption edge is also toward low energy.…”

Section: Resultssupporting

confidence: 78%

Tuning the band gap of PbCrO4 through high-pressure: Evidence of wide-to-narrow semiconductor transitions

Errandonea

Bandiello

Segura

et al. 2014

Journal of Alloys and Compounds

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Abstract:The electronic transport properties and optical properties of lead(II) chromate (PbCrO 4 ) have been studied at high pressure by means of resistivity, Hall-effect, and optical-absorption measurements. Band-structure first-principle calculations have been also performed. We found that the low-pressure phase is a direct band-gap semiconductor (Eg = 2.3 eV) that shows a high resistivity. At 3.5 GPa, associated to a structural phase transition, a band-gap collapse takes place, becoming Eg = 1.8 eV. At the same pressure the resistivity suddenly decreases due to an increase of the carrier concentration. In the HP phase, PbCrO 4 behaves as an n-type semiconductor, with a donor level probably associated to the formation of oxygen vacancies. At 15 GPa a second phase transition occurs to a phase with Eg = 1.2 eV. In this phase, the resistivity increases as pressure does probably due to the self-compensation of donor levels and the augmentation of the scattering of electrons with ionized impurities. In the three phases the band gap red shifts under compression. At 20 GPa, Eg reaches a value of 0.8 eV, behaving PbCrO 4 as a narrow-gap semiconductor.

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“…It has been suggested, based upon resistivity measurements, that ternary oxides related to wolframite might metallize through band overlaping at relative low pressures (12 -30 GPa) [52,53]. So far no evidence of metallization has been detected for all the studied wolframites, either in the pressure range of stability of the low-pressure phase or in the post-wolframite phases up to the maximum pressure achieved in experiments (45 GPa in ZnWO4 and CdWO4) [17,18].…”

Section: Electronic Structure and Band Gapmentioning

confidence: 96%