1985
DOI: 10.1016/0040-6090(85)90266-4
|View full text |Cite
|
Sign up to set email alerts
|

Phase transition and oxide dissolution processes in vacuum-annealed anodic Nb2O5/Nb systems

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1

Citation Types

1
19
0

Year Published

1985
1985
2013
2013

Publication Types

Select...
6
1

Relationship

0
7

Authors

Journals

citations
Cited by 32 publications
(21 citation statements)
references
References 19 publications
1
19
0
Order By: Relevance
“…Nb can act as a NEG. This is consistent with AES depth profiling measurements [25] showing that the oxide of the Nb 2 O 5 /Nb system is dissolved into the Nb bulk when heated to 325 °C while at 150 °C no oxide dissolution occurs.In a previous study of TiZr and TiZrV NEG coatings [11] a correlation has been found between the NEG activation temperature and the temperature needed to decrease the SEY to values close to those of the clean metals.In the present case of the Nb thin film only 1 h heating at 160 °C is sufficient to reduce its maximum SEY to about 1.4. However, heating temperatures above 250 °C are needed to decrease the SEY of chemically cleaned bulk Nb to the same value [8].…”
supporting
confidence: 79%
“…Nb can act as a NEG. This is consistent with AES depth profiling measurements [25] showing that the oxide of the Nb 2 O 5 /Nb system is dissolved into the Nb bulk when heated to 325 °C while at 150 °C no oxide dissolution occurs.In a previous study of TiZr and TiZrV NEG coatings [11] a correlation has been found between the NEG activation temperature and the temperature needed to decrease the SEY to values close to those of the clean metals.In the present case of the Nb thin film only 1 h heating at 160 °C is sufficient to reduce its maximum SEY to about 1.4. However, heating temperatures above 250 °C are needed to decrease the SEY of chemically cleaned bulk Nb to the same value [8].…”
supporting
confidence: 79%
“…In Fig. (c), we can find three peaks which are assigned to Nb 2 O 5 , NbO 2 and NbO, and they are located at ~208.6 eV, 206.2 eV and 203.6 eV . Results about the oxidation of Nb, either by exposure to air or in a controlled atmosphere of O 2 , the composition of surface layers and about the consequences of chemical treatments, are well established.…”
Section: Resultsmentioning
confidence: 76%
“…12 They have shown, that the annealing causes the O content of the oxide layer dissolve partially into the metal substrate. After the annealing, the composition of the remaining Ta 2 O 5 did not change, only an oxygen-depleted region was formed at the oxide/metal interface.…”
mentioning
confidence: 98%