Phase transformations in TiO2/SiO2 sol-gel films as a function of composition and heat-treatment

Melpolder, S. M.; West, A. W.; Barnes, C. L.; Blanton, Tom

doi:10.1007/bf00557148

Cited by 23 publications

(7 citation statements)

References 6 publications

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“…Previous work [6,7] has also shown that, the greater the concentration of silica, the higher the temperature and/or the longer the time the film must be heated to cause the phase transformation of titania from amorphous to either anatase or rutile [7]. Also, the crystaUite size was found to increase with the Ti content of the film and with the temperature [6].…”

Section: Introductionmentioning

confidence: 82%

Crystallization behavior of SiO2−TiO2 sol-gel thin films

Almeida

Christensen

1997

J Sol-Gel Sci Technol

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Abstract. The aim of this work was to investigate the crystallization behavior of thin films of SiO2-TiO2 made by the sol-gel process as function of the TiO2 content and the temperature and time of heat treatment. Precursor solutions were prepared by hydrolysis of TEOS (tetraethoxysilane) and TPOT (titanium tetraisopropoxide). Multilayer films were spun on single crystal silicon wafers. The compositions studied were (on a molar percentage basis) 20TIO2-80SIO2, 30TiO2-70SiO2, 40TiO2-60SiO2 and pure TiO2. The films were heat treated at different temperatures between 300~ and 1200~ for different periods of time (30 s-90 h). The crystallization kinetics were followed by micro-Raman spectrometry. Grazing incidence X-ray diffraction showed that the films crystallized into one or both of two crystalline phases of TiO2: anatase and rutile (for pure TiO2 only). The volume fractions of the crystalline phase varied from very low values (<1%), up to 100%, for a TiO2 sample heat treated at 800~ for 8 hours. The results show that the volume fraction of crystalline phase is strongly influenced by the heat treatment temperature and also, to a smaller extent, by the heat treatment time. The most important parameter, however, is the composition of the films: the higher their TiO2 concentration, the lower is the crystallization temperature and the larger is the crystallized fraction.

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Section: Introductionmentioning

confidence: 82%

Crystallization behavior of SiO2−TiO2 sol-gel thin films

Almeida

Christensen

1997

J Sol-Gel Sci Technol

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“…To minimize the formation of crystalline grains, the high k material can be made amorphous in combination with a glass-forming oxide such as SiO 2 . Titanium silicon oxide films have been produced by a variety of methods, including sol±gel, [17,18] flame hydrolysis, [19,20] sputtering, [21] and CVD.…”

Section: Introductionmentioning

confidence: 99%

Chemical Vapor Deposition of Ti_xSi_1–_xO₂ Films: Precursor Chemistry Impacts Films Composition

Smith

Hoilien

Dykstra

et al. 2003

Chemical Vapor Deposition

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Thin films of composition Ti x Si 1±x O 2 were grown by low-pressure (LP) CVD on silicon (100) , as the sources of SiO 2 and TiO 2 , respectively. The substrate temperature was varied between 300 C and 535 C, and the individual precursor delivery rates ranged from 5 sccm to 100 sccm. Under these conditions, growth rates ranging from 0.6 nm min ±1 to 90.0 nm min ±1 were observed. As-deposited films were amorphous to X-rays, and cross-sectional transmission electron microscopy (TEM) images showed no compositional inhomogeneity. Rutherford backscattering (RBS) spectrometry revealed that the relative concentration of TiO 2 and SiO 2 was dependent upon the choice of TiO 2 precursor. Possible multi-precursor deposition scenarios are presented and discussed in relation to the observed variation of film stoichiometry. For the TTIP±TEOS pair, the systematic variation of Ti content with deposition conditions could be accounted for by a growth scenario that limits SiO 2 growth to TiO 2 sites within the composite film. For the case of TN±TEOS the Ti content remained close to 50 % for all conditions studied. A specific chemical reaction between TN and TEOS prior to film deposition accounts for the observed composition.

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“…[7] There is a significant interest in the synthesis of SiC nanostructures as novel functional materials for nanoscale engineering. [8,9,10] Recently, SiC films have been produced through a variety of methods such as plasma-enhanced (PE) CVD, [11] magnetron sputtering, [12,13] and ion-beam sputtering. [14] For example, Rao et al [15] produced SiC films by application of hybrid thermal plasma with an RF induction field superimposed on a DC arc jet.…”

Section: Methodsmentioning

confidence: 99%

CVD of Thin Titanium Dioxide Films Using Hexanuclear Titanium Oxo Carboxylate Isopropoxides

Piszczek

Richert

Grodzicki

et al. 2005

Chem. Vap. Deposition

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Phase transformations in TiO2/SiO2 sol-gel films as a function of composition and heat-treatment

Cited by 23 publications

References 6 publications

Crystallization behavior of SiO2−TiO2 sol-gel thin films

Crystallization behavior of SiO2−TiO2 sol-gel thin films

Chemical Vapor Deposition of Ti_xSi_1–_xO₂ Films: Precursor Chemistry Impacts Films Composition

CVD of Thin Titanium Dioxide Films Using Hexanuclear Titanium Oxo Carboxylate Isopropoxides

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Phase transformations in TiO2/SiO2 sol-gel films as a function of composition and heat-treatment

Cited by 23 publications

References 6 publications

Crystallization behavior of SiO2−TiO2 sol-gel thin films

Crystallization behavior of SiO2−TiO2 sol-gel thin films

Chemical Vapor Deposition of TixSi1–xO2 Films: Precursor Chemistry Impacts Films Composition

CVD of Thin Titanium Dioxide Films Using Hexanuclear Titanium Oxo Carboxylate Isopropoxides

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Product

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Chemical Vapor Deposition of Ti_xSi_1–_xO₂ Films: Precursor Chemistry Impacts Films Composition