The problem of modeling processes of Relaxed Optics (RO) in the regime of saturation the excitation is discussed. Correlations between photoinized, plasmic and thermal processes are analyzed for various regimes of irradiation. The problem of creation stable structures is discussed too. The problem of modeling processes of irreversible interactions laser irradiation with solid is very difficult problem [1-5]. The basic effects irreversible must have thermal or plasmic character [4-6]. Processes of photoionization and nonlinear optical effects are neglected. The problem of modeling and observation nonlinear effects in self-absorption range of semiconductor is very difficult problem [7]. Thus we have contradiction: photoionized nature of laser irradiation of semiconductors or another solids and only thermal or plasmic nature of irreversible relaxation first-order excitations. Processes of very large laser pumping can cause suppression of oscillation and appearance of chaotization of laser radiation [8]. All these processes were explained with one physical chemical point of view [2], with using elementary energetic estimations [9]. The basic idea of this method is the successive saturation of excitation of proper chemical bonds of irradiated materials [2,10]. This method allows eliminating differences in the explanation of proper experimental data. For the sort regimes of irradiation, when irradiated time is less as relaxation time, the basic processes of irreversible changes in irradiated materials in the regime of saturation of excitations are straight processes of photoinization including multiphotonic processes of absorption. For indium antimonite most probable nonlinear processes for the regime of pulse Ruby-laser irradiation are the photon fragmentation and up conversion absorption. First effect is basic for the excitation of first chemical bond (one photon break off �4-5 bonds). This fact is caused grand relaxation time � 10-7 s. Up-conversion absorption is the result of the scatterillg Ruby-laser photons on excited electrons of first bond. This effect is caused break off second and third chemical bonds of InSb [2,10]. For the irradiating time less as first relaxation time � 10-7 s the processes of irradiated relaxation is negligible. But for the regimes of irradiation with time � 10-3 s the processes of reirradiation have grand value on the processes the formation irreversible changes ill irradiated materials.The profiles of a distribution of donor centers in InSb after laser irradiation were researched by V. Bogatyryov and G.Kachurin [3]. An irradiation was created with help Ruby laser (A = 0,69flrn, 1"i = 5 -6rns) and series of impulses Nd:YAG laser (A = 1,06flrn, 1"i = lOns, frequency of repetition of impulses was 12,5Hz). The dependence of layer concentration of electrons after Ruby-laser irradiation is represented in Fig.l [1 ,3]. A value of threshold the energy of creation n -layers is equaled � 5 J I 2' A tendency of the I ern saturation the layer concentration had place for the energy density � 30 J...
