Phase transformation of Si upon epitaxial CVD growths of β‐SiC layer on Si substrates

Abstract

PACS 78.30. Am, 81.15.Gh Micro-Raman spectroscopy was applied to investigate the stress relaxation in the CVD growth of SiC on silicon substrates. We observed a double-peak feature of the LO + 2TO silicon phonon in as-grown SiC/Si samples, and tentatively ascribed it to phase transformation of silicon during the epitaxial growth. Stress analysis around the featured regions suggested that it might be related with incomplete relief of local stress, such as appearance of micropipes in suitable circumstances.

Polarity determination and control of SiC grown on Si

“…5a. As a consequence of the carbon incorporation into the silicon near sur- face layers of the silicon substrate these layers are compressively stressed [54]. The second stage is schematically illustrated in Fig.…”

A photo-stimulated spectroscopic method for spatially resolved stress analysis in hetero-epitaxial films

“…On the other hand, photo-stimulated analyses based on Raman/fluorescence microprobe spectroscopy are gradually becoming a routine for stress evaluation in advanced devices, e.g. silicon-based semiconductors, owing to its advantages of high spatial resolution (micrometric scale) and a suitable combination of chemical and mechanical information [12,13]. However, in the presence of highly graded stress fields, the relatively large probe size for more transparent materials may hinder the accuracy of these types of measurements, and the interpretation of the measured averaged information in terms of residual stress may not be also straightforward for this technique.…”