2010
DOI: 10.1007/s00339-010-5706-0
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Phase transformation of Ni/Si thin films induced by nanoindentation and annealing

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Cited by 6 publications
(4 citation statements)
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“…The spectrum for the as grown nanowire show a peak compliant with NiSi 2 at 371 cm −1 from the core, Si at 520 cm −1 from the amorphous shell and NiO at 1000 cm −1 . 10,[12][13][14][15][16][17] The NiSi 2 occurs due to the conservation of free Ni within the system when the Ni from the crystalline core diffuses into the amorphous shell doping it to 10 atomic%. The NiO signal shows that there is free Ni at the surface which needs to be passivated since NiO in the bulk would be reduced by any free Si.…”
Section: Resultsmentioning
confidence: 99%
“…The spectrum for the as grown nanowire show a peak compliant with NiSi 2 at 371 cm −1 from the core, Si at 520 cm −1 from the amorphous shell and NiO at 1000 cm −1 . 10,[12][13][14][15][16][17] The NiSi 2 occurs due to the conservation of free Ni within the system when the Ni from the crystalline core diffuses into the amorphous shell doping it to 10 atomic%. The NiO signal shows that there is free Ni at the surface which needs to be passivated since NiO in the bulk would be reduced by any free Si.…”
Section: Resultsmentioning
confidence: 99%
“…The negative biasing induces a translation of the MW plasma and a MW-RF capacitive coupling occurs close to [34] and generate a molten Si/Ni phase rich in Si (Figure 7b). This phase, similar to the whole Si substrate, is negatively polarized and feels the average electrical field between substrate and plasma.…”
Section: Resultsmentioning
confidence: 99%
“…Lee et al [12] investigated the microstructural changes and phase transformations induced by nanoindentation and annealing in Ni [1] and Ag thin films [2] on Si substrates. They revealed that the distortion of the crystalline structure induced by indentation enhances the diffusivity of metal atoms and prompts the formation of nickel and silver silicide phases.…”
Section: Introductionmentioning
confidence: 99%
“…Also, the material pileup around the indents in the as-deposited film fully recovered and disappeared after annealing in the temperature range of 250–450 °C [3]. It should be noted that in all three works [13] the maximum indentation depth was larger than the metal film thickness, which resulted in significant modification of the Si substrate. Still, the microscopic mechanisms responsible for redistribution of matter in the indented region and the microstructural changes caused by annealing remained poorly understood.…”
Section: Introductionmentioning
confidence: 99%