Phase stability, microstructural evolution and room temperature mechanical properties of TiO2 doped 8mol% Y2O3 stabilized ZrO2 (8Y-CSZ)

Chen, Tiandan; Tekeli, Süleyman; Dillon, R. Peter; Mecartney, Martha L.

doi:10.1016/j.ceramint.2006.10.015

Cited by 37 publications

(14 citation statements)

References 20 publications

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“…Because no Gd 2 O 3 phases were observed in sample 3 indicating that Gd 2 O 3 could be accommodated in solid solution in the HfO 2 matrix. The replacement of Hf 4+ ions (0.086 nm) by Gd 3+ ions (0.093 nm) leads to obvious lattice distortion, thereby limiting the cubic grain growth …”

Section: Resultsmentioning

confidence: 99%

“…The replacement of Hf 4+ ions (0.086 nm) by Gd 3+ ions (0.093 nm) leads to obvious lattice distortion, thereby limiting the cubic grain growth. 23 Figures 2(a) and (b) present, respectively, the temperature (T) dependence of the dielectric constant e 0 (the real part of the complex permittivity e*) and dielectric loss tangent (tan d = e″/e 0 , where e″ is the imaginary part of the complex permittivity) of pure HfO 2 measured under various frequencies.…”

Section: Resultsmentioning

confidence: 99%

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Dielectric Properties of Pure and Gd‐Doped HfO₂ Ceramics

et al. 2015

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The pure, 2 at.%, and 20 at.% Gd‐doped HfO2 ceramics were prepared by the standard solid‐state reaction technique. Dielectric properties of these ceramics were investigated in the temperature range 300–1050 K and frequency range 20–5 × 106 Hz. Our results revealed an intrinsic dielectric constant around 20 in the temperature below 450 K for all tested ceramics. Two oxygen‐vacancy‐related relaxations R1 and R2 were observed at temperatures higher than 450 K, which were identified to be a dipolar relaxation due to grain response and a Maxwell–Wagner relaxation due to grain‐boundary response, respectively. The dielectric properties of the pure and slightly doped (2 at.%,) samples are dominated by the grain‐boundary response, which results in a colossal dielectric behavior similar to that found in CaCu3Ti4O12. The doping level of 20 at.% leads to the structural transformation from monoclinic phase to cubic phase. The dielectric properties of the heavily doped HfO2 are dominated by the grain response without any colossal dielectric behavior.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Dielectric Properties of Pure and Gd‐Doped HfO₂ Ceramics

et al. 2015

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“…3,14,15 To preserve fine grains while sintering, a second phase could be added to pin grain boundaries. For instance, Chen et al 16 prohibited grain growth of nanocrystalline zirconia with doping TiO 2 particles. In doing so, a homogenous distribution of the second phase is needed.…”

Section: Introductionmentioning

confidence: 99%

Suppression of grain growth in sub-micrometer alumina via two-step sintering method

Hesabi

Haghighatzadeh

Mazaheri

et al. 2009

Journal of the European Ceramic Society

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“…Research indicates that doping TiO 2 into RE 2 O 3 stabilized ZrO 2 can reduce the thermal conductivity, enhance the toughness, and improve the phase stability [25][26][27][28]. Therefore, this study is conducted on a ZrO 2 -Er 2 O 3 -TiO 2 system, investigating the effects of TiO 2 doping on the phase composition, thermal conductivity, and toughness of the compounds.…”

Section: Introductionmentioning

confidence: 99%

Phase Composition, Thermal Conductivity, and Toughness of TiO2-Doped, Er2O3-Stabilized ZrO2 for Thermal Barrier Coating Applications

et al. 2018

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TiO 2 was doped into Er 2 O 3 -stabilized ZrO 2 (ErSZ) to obtain desirable properties for thermal barrier coating (TBC) applications. The phase composition, thermal conductivity, and mechanical properties of TiO 2 -doped ErSZ were investigated. ErSZ had a non-transformable metastable tetragonal (t ) phase, the compound with 5 mol % TiO 2 consisted of t and cubic (c) phases, while 10 mol % TiO 2 doped ErSZ had t , c, and about 3.5 mol % monoclinic (m) phases. Higher TiO 2 doping contents caused more m phase, and the compounds were composed of t and m phases. When the dopant content was below 10 mol %, TiO 2 doping could decrease the thermal conductivity and enhance the toughness of the compounds. At higher doping levels, the compounds exhibited an increased thermal conductivity and a reduction in the toughness, mainly attribable to the formation of the undesirable m phase. Hence, 10 mol % TiO 2 -doped ErSZ could be a promising candidate for TBC applications.

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Phase stability, microstructural evolution and room temperature mechanical properties of TiO2 doped 8mol% Y2O3 stabilized ZrO2 (8Y-CSZ)

Cited by 37 publications

References 20 publications

Dielectric Properties of Pure and Gd‐Doped HfO₂ Ceramics

Dielectric Properties of Pure and Gd‐Doped HfO₂ Ceramics

Suppression of grain growth in sub-micrometer alumina via two-step sintering method

Phase Composition, Thermal Conductivity, and Toughness of TiO2-Doped, Er2O3-Stabilized ZrO2 for Thermal Barrier Coating Applications

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Phase stability, microstructural evolution and room temperature mechanical properties of TiO2 doped 8mol% Y2O3 stabilized ZrO2 (8Y-CSZ)

Cited by 37 publications

References 20 publications

Dielectric Properties of Pure and Gd‐Doped HfO2 Ceramics

Dielectric Properties of Pure and Gd‐Doped HfO2 Ceramics

Suppression of grain growth in sub-micrometer alumina via two-step sintering method

Phase Composition, Thermal Conductivity, and Toughness of TiO2-Doped, Er2O3-Stabilized ZrO2 for Thermal Barrier Coating Applications

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About

Dielectric Properties of Pure and Gd‐Doped HfO₂ Ceramics

Dielectric Properties of Pure and Gd‐Doped HfO₂ Ceramics