Phase-shift/transmittance measurements in a micro pattern using MPM193EX

Nozawa, Hiroto; Ishida, Takayuki; Kato, Satoru; Satô, Osamu; Miyazaki, Kôji; Takehisa, Kiwamu; Awamura, Naoki; Takizawa, Hideo; Kusunose, Haruhiko

doi:10.1117/12.824318

Cited by 2 publications

(2 citation statements)

References 5 publications

(11 reference statements)

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“…In the direct methods, the interferometry (the first row in Table 1) [8] is usually used for phase-shift measurement at optical masks, and has ~ 0.1 degree measurement accuracy. However, it could be difficult to apply this method to EUV because we need to construct all interference elements with reflective optics.…”

Section: Phase-shift Measurement Methodsmentioning

confidence: 99%

Direct phase-shift measurement of thin and thick absorber EUV masks

Murachi¹,

Tanabe²,

Park

et al. 2012

SPIE Proceedings

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The measurement and extraction method of phase-shift values for thin & thick absorber Extreme Ultra-Violet (EUV) masks has been studied by both of experiments and simulations. We fabricated 4 EUV masks with different absorber thicknesses. We first estimated the phase-shift values from the absorber thicknesses of each mask and the n&k values which were derived in advance by other experiments. This method is indirect and may contain plate-by-plate errors. In order to extract the phase-shift values directly, we developed a phase-shift measurement method based on scatterometry.We measured the reflectivity of the open and dark area of the 4 masks by using the EUV reflectometer at Lawrence Berkeley National Laboratory (LBNL). We also measured the diffracted light intensities of grating pattern. The phaseshift values were derived from these data assuming an interference of reflected and diffracted lights. We calibrated the method by including the shadowing effect of 6 degree incident angle, and adding the information on the measured mask patterns. The extraction results of phase-shift values by this method agreed well within the error bar. The absorber thickness having 180 degree phase-shift, which works as an embedded attenuated phase-shifting mask, could be somewhere between 66 nm and 76 nm. The measurement accuracy of this method depends on the phase-shift values.The error becomes the largest at 180 degree phase-shift, and the worst one in this experiment was much larger than the proposed phase-shift measurement accuracy of ± 2 degree [1] . Much effort will be required to achieve this target.

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Section: Phase-shift Measurement Methodsmentioning

confidence: 99%

Direct phase-shift measurement of thin and thick absorber EUV masks

Murachi¹,

Tanabe²,

Park

et al. 2012

SPIE Proceedings

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“…In this work, we have attempted to measure the actual light transmittance and the amount of phase shifting of the tiny phase shifter experimentally using the assembled tiny phase shifter aperture array pattern and the direct phase-shift/transmittance measurement tool named MPM193EX produced by Lasertec Corporation. 14,15) Furthermore, we have revealed the transmittance and phase shifting behavior of the tiny phase shifter depending on its feature size and trench depth.…”

Section: Introductionmentioning

confidence: 96%

Fundamental Study of the Mask Topography Effect on the Advanced Phase-Shifting Masks for Next-Generation Lithography

Yuito¹,

Misaka²,

Sasago³

2010

Jpn. J. Appl. Phys.

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Phase-shifting masks (PSMs) with trench- or mesa-type quartz etched structure are widely known as powerful resolution enhancement technologies for advanced lithography. For advanced PSMs, the feature size on a mask including a phase shifter is beyond the wavelength of the light source, and for such a sub-wavelength phase shifter, the impact of the mask topography effect on the amount of phase shifting and the light transmittance becomes prominent. However, an effective method of measuring the actual phase shifting and transmittance of such a tiny phase shifter has not yet been reported because of the difficulty in measuring the sub-wavelength structure. In this work, we have attempted to measure the actual transmittance and phase shifting using the assembled tiny phase shifter aperture array pattern, and we have successfully revealed the actual transmittance and phase shifting behavior of the tiny phase shifter depending on its feature size and trench depth.

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Phase-shift/transmittance measurements in a micro pattern using MPM193EX

Cited by 2 publications

References 5 publications

Direct phase-shift measurement of thin and thick absorber EUV masks

Direct phase-shift measurement of thin and thick absorber EUV masks

Fundamental Study of the Mask Topography Effect on the Advanced Phase-Shifting Masks for Next-Generation Lithography

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