“…Therefore, the studies of the growth and properties of AlInN alloys, particularly their luminescence properties, are few up to now. [12][13][14][15][16] In this paper, we describe the growth of AlInN ternary alloys and their structural and optical characterizations in order to obtain high-crystalline quality thin films suitable for the application of luminescent devices by ammonia gas source molecular beam epitaxy (GS-MBE). It has been well known that MBE has the following advantages: the controllability of film thickness on an atomic scale, the in situ observation of the surface microstructure of a growing film by refection high-energy electron diffraction (RHEED), and the use of high-purity sources.…”