Phase separation in InGaN/GaN multiple quantum wells

McCluskey, M. D.; Romano, L. T.; Krusor, B. S.; Bour, D. P.; Johnson, N. M.; Brennan, S.

doi:10.1063/1.121166

Cited by 195 publications

(147 citation statements)

References 11 publications

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“…Fluctuations on this length scale have indeed been observed in experiments [12] and have been shown to dramatically enhance the luminescence efficiency [1]. Although bulk phase separation in InGaN has been observed at relatively high temperatures or for thick films [13], the observed effects in thin InGaN quantum wells appear to have different origin. If the bulk In concentration is roughly proportional to the layer 2 In concentration, then the surface reconstruc- tion established here provides a new mechanism to produce variations in the bulk In concentration on a nanometer scale.…”

Section: (Received 20 April 2000)mentioning

confidence: 77%

Spontaneous Formation of Indium-Rich Nanostructures on InGaN(0001) Surfaces

et al. 2000

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InGaN(0001) surfaces prepared by molecular beam epitaxy have been studied using scanning tunneling microscopy and first-principles total energy calculations. Nanometer-size surface structures are observed consisting of either vacancy islands or ordered vacancy rows. The spontaneous formation of these structures is shown to be driven by significant strain in the surface layers and by the relative weakness of the In-N bond compared to Ga-N. Theory indicates that In will preferentially bind at the edges and interior of the structures, thereby giving rise to an inhomogeneous In distribution at the surface.

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Section: (Received 20 April 2000)mentioning

confidence: 77%

Spontaneous Formation of Indium-Rich Nanostructures on InGaN(0001) Surfaces

et al. 2000

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“…During the whole procedure, the beam angle was set at 5° for the two guns. Prior to analytical TEM by EDXS and EELS, conventional TEM investigations were performed by high resolution TEM using a JEOL 2010 microscope, for defect investigation in order to determine the strain relaxation mechanisms in these layers which may involve the formation of typical defects such as dislocations [6,7,8], stacking faults [9,10,11] and, in the worst cases, inversion domains [12,13] as well as phase ordering and phase separation [14,15].…”

Section: In X Ga 1-x N Thin Film Growthmentioning

confidence: 99%

Combination of electron energy-loss spectroscopy and energy dispersive x-ray spectroscopy to determine indium concentration in InGaN thin film structures

Wang

Chauvat

Ruterana

et al. 2015

Semicond. Sci. Technol.

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Article:Wang, X., Chauvat, M.P., Ruterana, P. et al. (1 more author) (2015) Combination of electron energy-loss spectroscopy and energy dispersive x-ray spectroscopy to determine indium concentration in InGaN thin film structures. Semiconductor Science and Technology, 30 (11). 114011. ISSN 0268-1242 https://doi.org/10.1088/0268-1242/30/11/114011 eprints@whiterose.ac.uk https://eprints.whiterose.ac.uk/ Reuse Unless indicated otherwise, fulltext items are protected by copyright with all rights reserved. The copyright exception in section 29 of the Copyright, Designs and Patents Act 1988 allows the making of a single copy solely for the purpose of non-commercial research or private study within the limits of fair dealing. The publisher or other rights-holder may allow further reproduction and re-use of this version -refer to the White Rose Research Online record for this item. Where records identify the publisher as the copyright holder, users can verify any specific terms of use on the publisher's website. TakedownIf you consider content in White Rose Research Online to be in breach of UK law, please notify us by emailing eprints@whiterose.ac.uk including the URL of the record and the reason for the withdrawal request. We demonstrate a method to determine the indium concentration, x, of In x Ga 1-x N thin films by combining plasmon excitation studies in electron energy-loss spectroscopy (EELS) with a novel way of quantification of the intensity of X-ray lines in energy-dispersive X-ray spectroscopy (EDXS). The plasmon peak in EELS of InGaN is relatively broad. We fitted a Lorentz function to the main plasmon peak to suppress noise and the influence from the neighbouring Ga 3d transition in the spectrum, which improves the precision in the evaluation of the plasmon peak position. As the indium concentration of InGaN is difficult to control during high temperature growth due to partial In desorption, the nominal indium concentrations provided by the growers were not considered reliable. The indium concentration obtained from EDXS quantification using Oxford Instrument ISIS 300 X-ray standard quantification software often did not agree with the nominal indium concentration, and quantification using K and L lines was inconsistent. We therefore developed a self-consistent iterative procedure to determine the In content from thickness-dependent k-factors using, as described in recent work submitted to Journal of Microscopy. When the plasmon peak position is plotted versus the indium concentration from EDXS we obtain a linear relationship over the whole compositional range, and the standard error from linear Page 1 of 10 CONFIDENTIAL -AUTHOR SUBMITTED MANUSCRIPT SST-101604. R1 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 least-squares fitting shows that the indium concentration can be determined from the plasmon peak position to within...

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“…Evidence for these fluctuations has been reported recently for thick In x , Ga1-x Ν films [5] as well as for quantum well structures [6]. As the decomposition of InN starts at approximately 630°C whereas GaN is stable up to 850°C [7] loss of In from the film during growth may occur due to the thermal dissociation of In-N bonds.…”

Section: )mentioning

confidence: 98%

Optical Properties and Microstructure of InGaN Grown by Molecular Beam Epitaxy

et al. 1998

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The luminescence of InxGa1-x Ν is studied for thick epitaxial layers and quantum wells. Using spatially resolved cathodoluminescence spectroscopy the commonly observed broad integral photołuminescence spectra were found to result from spectral and lateral inhomogeneous emission across the samples. Moreover, the integral photoluminescence and absorption spectra show different temperature dependences. The effects can be explained assuming fluctuations of the composition associated with a variation of the band gap.

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Phase separation in InGaN/GaN multiple quantum wells

Cited by 195 publications

References 11 publications

Spontaneous Formation of Indium-Rich Nanostructures on InGaN(0001) Surfaces

Spontaneous Formation of Indium-Rich Nanostructures on InGaN(0001) Surfaces

Combination of electron energy-loss spectroscopy and energy dispersive x-ray spectroscopy to determine indium concentration in InGaN thin film structures

Optical Properties and Microstructure of InGaN Grown by Molecular Beam Epitaxy

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