Phase separation and exchange biasing in the ferromagnetic IV-VI semiconductor Ge1−xMnxTe

Lechner, R. T.; Springholz, G.; Hassan, M.; Groiß, Heiko; Kirchschlager, R.; Stangl, J.; Hrauda, N.; Bauer, G.

doi:10.1063/1.3459149

Cited by 66 publications

(52 citation statements)

References 17 publications

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“…In the transition metal doped IVVI materials the itinerant ferromagnetism with relatively high Curie temperatures is easily achievable because of the high Mnhole magnetic exchange constant, J pd ≈ 0.8 eV [2], and natural high p-type conductivity with carrier concentration, n ≈ 10 20 10 21 cm −3 [3]. The highest reported Curie temperature among IVVI materials is around 200 K for Ge 1−x Mn x Te with x = 0.5 [4] and 160 K for Ge 1−x Cr x Te for x ≈ 0.06 [5], close and slightly above the values for Ga 1−x Mn x As and much higher than other IIIV and IIVI diluted magnetic semiconductors [6]. Thus, GeTe based diluted magnetic semiconductors are perceived as potential material for the semiconductor spintronics working at room temperature.…”

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confidence: 94%

Spinodal Decomposition of Magnetic Ions in Eu-Codoped Ge_1-xCr_xTe

et al. 2012

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Spinodal Decomposition of Magnetic Ions in Eu-Codoped Ge_1-xCr_xTe

et al. 2012

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“…The SARPES data were measured with the Mott polarimeters at the COPHEE end station at 20 K [21]. Experiments were performed on 200-nm-thick ferroelectric Te-terminated α-GeTe(111) films (see Supplemental Material [22]) grown by molecular beam epitaxy on BaF 2 (111) substrates [19,23]. A protective stack of amorphous Te-and Se-capping layers with a total thickness of 20 nm was used to avoid surface degradation and oxidation.…”

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Disentangling bulk and surface Rashba effects in ferroelectricα-GeTe

Volfová²,

et al. 2016

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Macroscopic ferroelectric order in α-GeTe with its noncentrosymmetric lattice structure leads to a giant Rashba spin splitting in the bulk bands due to strong spin-orbit interaction. Direct measurements of the bulk band structure using soft x-ray angle-resolved photoemission (ARPES) reveals the three-dimensional electronic structure with spindle torus shape. By combining high-resolution and spin-resolved ARPES as well as photoemission calculations, the bulk electronic structure is disentangled from the two-dimensional surface electronic structure by means of surface capping, which quenches the complex surface electronic structure. This unravels the bulk Rashba-split states in the ferroelectric Rashba α-GeTe(111) semiconductor exhibiting a giant spin splitting with Rashba parameter α R around 4.2 eVÅ, the highest of so-far known materials. DOI: 10.1103/PhysRevB.94.205111 In spintronics an important goal is to be able to control the spin of the electron in solids without applying magnetic fields [1,2]. The most promising mechanism is based on the Rashba effect [3] and the subsequent spin precession induced in such systems [4]. While most research has previously focused on 2D electron systems [5,6], recently a threedimensional (3D) form of such Rashba effect was found in a series of bismuth tellurohalides BiTeX (X = I, Br, or Cl) [7][8][9][10][11][12]. Although these materials exhibit a very large spin splitting, they lack an important property concerning functionalization, namely, the possibility to switch or tune the spin texture. This limitation can be overcome in a new class of functional materials displaying Rashba splitting coupled to ferroelectricity, the so-called ferroelectric Rashba semiconductors (FERS) [13,14].Recent photoemission experiments on α-GeTe-the stable rhombohedral room temperature configuration of the GeTe phase change material [15]-indicate that this system is a hallmark candidate for entanglement of the ferroelectric and spin-orbit order [16,17]. Due to the giant Rashba splitting spin injection from magnetic systems into GeTe appears viable in order to achieve spin-to-charge conversion [18]. Therefore, ferroelectric [13] or multiferroic [19] Rashba semiconductors bring new multifunctional assets for spintronic devices. A crucial issue for the understanding of FERS is to disentangle the Rashba effect in the bulk caused by the bulk ferroelectric lattice distortion and surface effects arising from particular surface terminations and/or possible band bendings. This represents a major challenge for surface sensitive techniques such as angle-resolved photoemission (ARPES). For this reason up to now ARPES measurements on α-GeTe surfaces performed in the surface-sensitive UV regime have been dominated by surface effects [16,17] and clear information of the three-dimensional bulk electronic structure and its spin texture has not been obtained.

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“…Semimagnetic semiconductors based on transition metal doped IVVI materials are of particular interest due to the presence of carrier mediated ferromagnetism with Curie temperature, T C , as high as 200 K for Ge 1−x Mn x Te with x = 0.5 [1]. Chromium alloyed IVVI materials such as GeTe also show ferromagnetism with transition temperatures as high as 160 K for thin layers [2] and 60 K for bulk crystals [35].…”

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Magnetic Order and Magnetic Inhomogeneities in SnCrTe-PbCrTe Solid Solutions

et al. 2014

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We present the studies of structural, electrical and magnetic properties of bulk Sn1−x−y PbxCry Te mixed crystals with chemical composition 0.18 ≤ x ≤ 0.35 and 0.007 ≤ y ≤ 0.071. The magnetometric studies indicate that for the high Cr-content, y = 0.071, the alloy shows ferromagnetic alignment with the Curie temperature, TC, around 265 K. The Cr5Te8 clusters are responsible for the ferromagnetic order. At low Cr content, y ≈ 0.01, a peak in the ac magnetic susceptibility identied as the cluster-glass-like transition is observed at a temperature about 130 K. The cluster-glass-like transition is likely due to the presence of Cr2Te3 clusters in the samples with y ≈ 0.01. The transport characterization of the samples indicated strong metallic p-type conductivity with relatively high carrier concentration, n > 10 20 cm −3 , and carrier mobility, µ > 150 cm 2 /(V s).

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Phase separation and exchange biasing in the ferromagnetic IV-VI semiconductor Ge1−xMnxTe

Cited by 66 publications

References 17 publications

Spinodal Decomposition of Magnetic Ions in Eu-Codoped Ge_1-xCr_xTe

Spinodal Decomposition of Magnetic Ions in Eu-Codoped Ge_1-xCr_xTe

Disentangling bulk and surface Rashba effects in ferroelectricα-GeTe

Magnetic Order and Magnetic Inhomogeneities in SnCrTe-PbCrTe Solid Solutions

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Phase separation and exchange biasing in the ferromagnetic IV-VI semiconductor Ge1−xMnxTe

Cited by 66 publications

References 17 publications

Spinodal Decomposition of Magnetic Ions in Eu-Codoped Ge1-xCrxTe

Spinodal Decomposition of Magnetic Ions in Eu-Codoped Ge1-xCrxTe

Disentangling bulk and surface Rashba effects in ferroelectricα-GeTe

Magnetic Order and Magnetic Inhomogeneities in SnCrTe-PbCrTe Solid Solutions

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Spinodal Decomposition of Magnetic Ions in Eu-Codoped Ge_1-xCr_xTe

Spinodal Decomposition of Magnetic Ions in Eu-Codoped Ge_1-xCr_xTe