Phase‐selective Route to V‐O Film Formation: A Systematic MOCVD Study Into the Effects of Deposition Temperature on Structure and Morphology

Abstract

A systematic study into the MOCVD of V-O films using the vanadyl-acetylacetonate [VO(acac) 2 ] precursor is carried out. The films are prepared via low pressure MOCVD on Si(001) substrates. The nature and quality of films are examined by varying operational parameters, e.g., deposition temperature, precursor vaporization rate, and flow of oxygen reacting gas. X-ray diffraction data point to the formation of crystalline films in the range 200À550 8C. Outside of this temperature ranges amorphous phases were obtained. Field-emission scanning electron microscope (FESEM) images indicate very homogeneous surfaces with grain shape and dimensions depending on operational conditions. Energy dispersive X-ray (EDX) and X-ray photoelectron spectroscopy (XPS) analyses point to the absence of any C contamination.

Highly Tunable MOCVD Process of Vanadium Dioxide Thin Films: Relationship between Structural/Morphological Features and Electrodynamic Properties

“…The results reported are well framed within the data previously reported in ref. [ 28 ]. As widely studied in the past decades, the vanadium oxide phases present different V-O ratios, which results in the formation of VO 2 , V 2 O 5 , V 4 O 9 and V 6 O 13 structures with different V oxidation states.…”

“…Among the different synthetic strategies tested in literature, pulsed laser deposition [ 22 ], molecular beam epitaxy [ 23 ], magnetron sputtering [ 24 ], atomic layer deposition (ALD) [ 25 ] and electrodeposition [ 26 , 27 ] have been reported. Metal-organic chemical vapor deposition (MOCVD) represents, up to now, one of the most appealing approaches for the deposition of V-O films, due to its advantages, ranging from reliable and reproducible methods, fast and industrially scalable production and high control of thin film growth in terms of composition and morphology over large areas [ 28 , 29 ].…”