2007
DOI: 10.1103/physrevb.76.014415
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Phase relationships, and the structural, magnetic, and thermodynamic properties in theSm5SixGe4xpseudobinary system

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Cited by 20 publications
(9 citation statements)
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“…33 The effective magnetic moment of the samples are considerably smaller than the free Sm 3+ ion value of 0.845 µ B /Sm atom. Similar low values of µ ef f have been reported in other studies 36,37 and are not necessarily evidence for an intermediate valence for Sm; an accurate theoretical description of experimental data in Sm systems is complicated by the combined effects of the crystalline electric field (CEF) effects and J-mixing. 38 The results of specific heat C measurements for x = 0.1, 0.8, and a nonmagnetic reference compound LaOBiS 2 are dis- played in Fig.…”
Section: Resultssupporting
confidence: 51%
“…33 The effective magnetic moment of the samples are considerably smaller than the free Sm 3+ ion value of 0.845 µ B /Sm atom. Similar low values of µ ef f have been reported in other studies 36,37 and are not necessarily evidence for an intermediate valence for Sm; an accurate theoretical description of experimental data in Sm systems is complicated by the combined effects of the crystalline electric field (CEF) effects and J-mixing. 38 The results of specific heat C measurements for x = 0.1, 0.8, and a nonmagnetic reference compound LaOBiS 2 are dis- played in Fig.…”
Section: Resultssupporting
confidence: 51%
“…There is thus the potential for Sm compounds to condense into a ferromagnetic phase in which the spins are ferromagnetically ordered but with their spin moment nearly canceled by an opposing orbital moment. Moments substantially smaller than the freeion moment of 0.71 B are not unknown in ferromagnetic Sm compounds [8][9][10][11][12][13] but its occurrence in a semiconductor has to our knowledge not been reported previously. Such a material offers special advantages for spintronics: ͑i͒ it can inject spin-polarized electrons into a conventional semiconductor without the deleterious effects of a fringe magnetic field, 14 and ͑ii͒ in principle it can form field-free, fully spinpolarized electronically active structures.…”
Section: Introductionmentioning
confidence: 78%
“…As commonly observed in the Sm compounds, here the inverse susceptibility in the paramagnetic region cannot be described by linear Curie-Weiss law due to a number of interrelated factors including crystalline electric field (CEF) splitting, the low level excited states of J multiplet, and the Van Vleck transition between different J multiplets. The low-temperature X-ray diffraction data (Ahn et al, 2007) show that a coupled magnetostructural transition from paramagnetic M structure into ferromagnetic O(I) structure occurs in Sm 5 Si 2 Ge 2 at T C . The energy separation between J ¼ 7/2 and J ¼ 5/2 states obtained from the fitting of the magnetic susceptibility data is also lower than expected for free Sm 3þ ions ($1350K, Van Vleck, 1932.…”
Section: Sm 5 Si X Ge 4àxmentioning
confidence: 97%
“…However, Ahn et al (2007) presented a systematic investigation of phase relationships and crystal structures in this pseudobinary system complemented by thorough measurements of the magnetic and thermodynamic properties. However, Ahn et al (2007) presented a systematic investigation of phase relationships and crystal structures in this pseudobinary system complemented by thorough measurements of the magnetic and thermodynamic properties.…”
Section: Sm 5 Si X Ge 4àxmentioning
confidence: 99%