Phase Relations in the Solidus Region of the SrO-Bi2O3-B2O3 System

Kargin, Yu. F.; Ivicheva, S. N.; Комова, М. Г.; Крутько, В. А.

doi:10.1134/s0036023608030157

Cited by 4 publications

(5 citation statements)

References 10 publications

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“…Synergistic vitrification also occurs, for a given network former, when replacing on a cation basis part of the Bi 2 O 3 with other alkaline earth and transition metal oxides. This occurs in spite of a generally poorer vitrification with these oxides (except PbO) taken individually than with Bi 2 O 3 , and is seen for borates with SrO,246, 258, 346 BaO,246, 258, 270, 349 PbO,130, 246, 279 ZnO246, 354, 355, 392 and CuO y 249 Figure 4,. redrawn on a cation basis from the original studies,249, 354 illustrates the case of the Bi 2 O 3 –B 2 O 3 binary extended with ZnO and CuO y : there is clearly an optimum in substitution that minimises the required amount of network former.…”

Section: Bismuth Glassesmentioning

confidence: 96%

“…Vzrzs, [341][342][343] T g 343 Mg-Bi-B P 344 Ca-Bi-B P, 345 T g zT x zezs, 269 Sr-Bi-B P, 346 V, 246,258,346 Wzrzs 258 Ba-Bi-B P, 347,348 V, 246,258,270,349 S, 266,349,350 T g , 349 T x , 349 EzH 266 Wzr, 258,266,349,350 s, 258 SzN 351 Ba-Zn-Bi-Al-B-Sb azT g zT s zT x zWzs 271 Pb-Bi-B P, 279 V 246,253,259,261 RzS, 352 SzWzT s za, 254 T g , 253,259,261,352 E, 253,259,261 the section on 'Estimation of cooling rates' in Supplementary Material 1 http://dx.doi.org/10.1179/1743280412Y. 0000000010.S1.…”

Section: Oxide Systemmentioning

confidence: 99%

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Review of Bi₂O₃ based glasses for electronics and related applications

Maeder

2013

International Materials Reviews

146

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The present work critically reviews the scientific and patent literature on low melting bismuth based oxide glass frits in materials for electronics, sensors and related applications such as sealing glasses, solar cells, architectural and automotive glass, the main motivation being to replace lead based materials by environmentally more benign ones. Due to similar glass forming properties of Bi and Pb, Bi based glasses are the closest 'drop-in' alternative for lead bearing formulations, and are therefore actually replacing them in many applications, helped also by previous experience with Bi containing materials in thick film technology and component metallisations. The outstanding issues are discussed, e.g. matching the lowest processing temperatures achieved by the classical lead based glasses without sacrificing durability and stability, as well as stability versus chemical reduction. Finally, consideration is also given to special 'heavy' glasses (often containing Bi and Pb together) that are useful in fields such as optics, superconductors and nuclear technology, as well as to specific Bi 2 O 3 containing crystalline compounds.Keywords: Glasses, Bismuth, Bi 2 O 3 , Electronics, Optics, Thick film technology, Sensors Introduction Low melting glasses in electronics and other applicationsAs for ceramics, inorganic glasses, glass-ceramic and glaze materials have long gone beyond their traditional uses to address a wide array of modern technological challenges, Owing to performance and cost criteria, most standard glasses have relatively high softening points. However, there are many technological applications where a low softening temperature is required, in order to lower energy expenditure, avoid damaging devices in contact with the glass during processing or ensure compatibility with other materials:(i) hermetic sealing of packages, lamps, electrical feedthroughs and semiconductor devices 13,14,16,17,19,44,45 (ii) hermetic sealing and mechanical attachment of sensors 23,27 ( Fig. 1) (iii) encapsulation of semiconductor devices 29,30 (iv) overglazing of automotive, packaging and architectural glass 33,34,[46][47][48] (v) photovoltaic (PV) solar cell technology -conductors and contacts 42,43,[49][50][51][52][53] (vi) enamelling of aluminium in architecture and home appliances 35,[54][55][56][57][58] (vii) thick film (TF) electronics and other devices 21,22,24,25,27,59 (Fig. 1, the section on 'PbO in low melting frits and TF technology'); especially, special low firing compositions for fabrication of circuits and sensors on glass or metals. 1,28,[66][67][68][69][70][71][72] For these applications, glasses are often formulated as frits (e.g. finely divided powder), which may be applied, dispersed in a suitable medium, onto a substrate by various methods such as slip casting, screen printing, roller/curtain coating, spraying, dispensing and electrophoresis, or as preforms for sealing. Classically, the aforementioned applications have to a great extent used lead based glasses, which have a rather unique combinat...

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Section: Bismuth Glassesmentioning

confidence: 96%

Section: Oxide Systemmentioning

confidence: 99%

Review of Bi₂O₃ based glasses for electronics and related applications

Maeder

2013

International Materials Reviews

146

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“…The Na 2 -B 2 O 3 system has been investigated repeatedly [1][2][3][4][5][6][7]. However, the X-ray diffraction data reported for almost all phases in the system are rather contradictory.…”

Section: -B 2 O 3 Systemmentioning

confidence: 99%

High-temperature crystal chemistry of α-Na2B4O7 and β-NaB3O5 layered borates

et al. 2007

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The thermal expansion of two layered sodium borates is investigated using high-temperature X-ray powder diffraction. It is established that both compounds are characterized by strong anisotropy of thermal expansion due to the hinge mechanism. Special (singular) points are revealed in the temperature dependences of the angular lattice parameters for the α -Na 2 B 4 O 7 compound. The temperature of manifestation of these singularities corresponds to the glass transition temperature of the melt of the same chemical composition. The assumption is made that the angular lattice parameters (angles between atomic rows) in compounds with a considerable degree of ionic bonding are more sensitive to variations in temperature as compared to the linear lattice parameters (interatomic distances). It is experimentally in situ demonstrated with high-temperature X-ray diffraction that the β -NaB 3 O 5 borate is peritectically melted at a temperature of 725 ± 10 ° C with the formation of the α -Na 2 B 8 O 13 octaborate.

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“…However, a very high sintering temperature at about 1750 • C is needed to obtain dense alumina bodies. Chemical processing of small-sized particles as starting materials, and adding glass or other low-melting materials effectively lower firing temperature with improvement in dielectric properties of the aluminous bodies (Cutler et al 1991;Chen and Chen 1992;Alford and Penn 1996;Erkalfa et al 1996;Liu et al 2001;Ota et al 2004;Huang et al 2005;Huang and Chen 2006;Vishista and Gnanam 2006;Lim et al 2007;Kargin et al 2008;Abdel Aziz et al 2009). The properties of alumina ceramic bodies are significantly affected by the liquid sintering temperature due to the development of microstructure at low sintering temperature or the reaction between the host materials.…”

Section: Introductionmentioning

confidence: 95%

“…Strontia (SrO) was added to Al 2 O 3 ceramic bodies to improve their physical and mechanical properties (Cutler et al 1991;Vishista and Gnanam 2006;Kargin et al 2008). Vishista and Gnanam (2006) studied the effect of strontia content (5-20 wt%) on the properties of sol-gel alumina bodies.…”

Section: Introductionmentioning

confidence: 99%

Densification and dielectric properties of SrO–Al2O3–B2O3 ceramic bodies

Aziz

Ahmed

2011

Bull Mater Sci

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The influence of SrO (0·0-5·0 wt%) on partial substitution of alpha alumina (corundum) in ceramic composition (95 Al 2 O 3 -5B 2 O 3 ) have been studied by co-precipitated process and their phase composition, microstructure, microchemistry and microwave dielectric properties were studied. Phase composition was revealed by XRD, while microstructure and microchemistry were investigated by electron-probe microanalysis (EPMA). The dielectric properties by means of dielectric constant (ε r ), quality factor ( Q× f ) and temperature coefficient of resonant frequency (τ f ) were measured in the microwave frequency region using a network analyser by the resonance method. The addition of B 2 O 3 and SrO significantly reduced the sintering temperature of alumina ceramic bodies to 1600 • C with optimum density (∼ 4 g/cm 3 ) as compared with pure alumina powders recycled from Al dross (3·55 g/cm 3 sintered at 1700 • C).The sintered ceramic bodies show different ranges for the dielectric properties. Dielectric constant exists between 24 and 29, quality factor ( Q × f ) is ranging between 15,236 and 22,020 GHz with a slight increase than those recorded with commercial alumina (10,000 -20,000 GHz) and temperature coefficient of resonant frequency (τ f ) in the -69 to -83 ppm/ • C range. The addition of SrO up to 5 wt% leads to a maximum (ε r ) value (29) due to relatively higher ionic polarizability of Sr 2+ than that of the Al 3+ and B 3+ ions. On the other hand, changing chemical and phase composition with the formation of platelets of Sr-hexaluminate phase (SrAl 12 O 19 ) results in maximizing value of ( Q × f ) up to 22,020 GHz at ≈ 8 GHz and large negative charge of (τ f ) to -83 ppm/ • C.

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Phase Relations in the Solidus Region of the SrO-Bi2O3-B2O3 System

Cited by 4 publications

References 10 publications

Review of Bi₂O₃ based glasses for electronics and related applications

Review of Bi₂O₃ based glasses for electronics and related applications

High-temperature crystal chemistry of α-Na2B4O7 and β-NaB3O5 layered borates

Densification and dielectric properties of SrO–Al2O3–B2O3 ceramic bodies

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Phase Relations in the Solidus Region of the SrO-Bi2O3-B2O3 System

Cited by 4 publications

References 10 publications

Review of Bi2O3 based glasses for electronics and related applications

Review of Bi2O3 based glasses for electronics and related applications

High-temperature crystal chemistry of α-Na2B4O7 and β-NaB3O5 layered borates

Densification and dielectric properties of SrO–Al2O3–B2O3 ceramic bodies

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Product

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Review of Bi₂O₃ based glasses for electronics and related applications

Review of Bi₂O₃ based glasses for electronics and related applications