Phase relations in the quasi-binary Cu2GeS3–ZnS and quasi-ternary Cu2S–Zn(Cd)S–GeS2 systems and crystal structure of Cu2ZnGeS4

Parasyuk, O.V.; Піскач, Л. В.; Romanyuk, Y.E.; Olekseyuk, I. D.; Zaremba, Vasyl’ I.; Pekhnyo, V. I.

doi:10.1016/j.jallcom.2004.12.045

Cited by 105 publications

(63 citation statements)

References 53 publications

(81 reference statements)

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“…We agree with Parasyuk et al who mentioned that the slight deformation of the tetrahedra [GeS 4 ] is increased in the silicon compound and decreased in the case of tin [7].…”

Section: Single Crystal Investigationssupporting

confidence: 93%

“…Many compounds showed a clear preference but others fell in an overlap area where both structure types could occur principally. A similar idea was later presented by Parasyuk et al [7] They discussed the influence of the different ionic radii of the cations and the correlated deformations of the different tetrahedra [MS 4 ] on the stability of the two principally different structural variants and even on the stability of the normal adamantane structures (see [6] for the definition of this term).…”

Section: Introductionmentioning

confidence: 91%

“…Especially in the last years the research concentrated on the investigation of phase diagrams of quasi-ternary systems I 2 Q-IIQ-IVQ 2 (I ¼ Cu, Ag, II ¼ Cd, Hg, Zn, IV ¼ Si, Ge, Sn, Q ¼ S, Se, Te) [7]. Quaternary compounds are formed in these systems and Rietveld refinements of several compounds of the type I 2 -II-IV-Q 4 are available in literature.…”

Section: Introductionmentioning

confidence: 99%

“…The intervening germanium compounds show no clear preference for one of the two-anion packing variants. According to [7] to date mainly germanium compounds are found to have both, a high-and a lowtemperature modification (e.g. Cu 2 ZnGeS 4 /Se 4 , Cu 2 CdGeS 4 / Se 4 ).…”

Section: Introductionmentioning

confidence: 99%

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Mixed crystals in the system Cu2MnGexSn1−xS4: Phase analytical investigations and inspection of tetrahedra volumes

Bernert

Zabel

Pfitzner

2006

Journal of Solid State Chemistry

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Cu 2 MnGeS 4 crystallizes orthorhombic in a wurtzite superstructure type while Cu 2 MnSnS 4 crystallizes in a tetragonal sphalerite superstructure type. Lattice constants and thermal analyses of the solid solution series Cu 2 MnGe x Sn 1Àx S 4 are presented. A two-phase region is found from Cu 2 MnGe 0.3 Sn 0.7 S 4 to Cu 2 MnGe 0.5 Sn 0.5 S 4 . The cell volume of the mixed crystals increases with increasing Sn content. The melting points increase smoothly with increasing Ge content to x ¼ 0:5 and then steeply for higher Ge contents. The single crystal X-ray structure analysis of Cu 2 MnGe 0.55 Sn 0.45 S 4 is presented. The refinement converges to R ¼ 0:0270 and wR 2 ¼ 0:0586, Z is 2. The volumes of the tetrahedra [MS 4 ] (M ¼ Cu, Mn, Ge, Sn) are calculated. From these volumes the differences in size of the tetrahedra are derived and compared with the corresponding differences in the end members of the solid solution series. It turns out that the resulting structure type in these materials depends on the volume differences of the constituting tetrahedra [MS 4 ].

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“…We agree with Parasyuk et al who mentioned that the slight deformation of the tetrahedra [GeS 4 ] is increased in the silicon compound and decreased in the case of tin [7].…”

Section: Single Crystal Investigationssupporting

confidence: 93%

Section: Introductionmentioning

confidence: 91%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Mixed crystals in the system Cu2MnGexSn1−xS4: Phase analytical investigations and inspection of tetrahedra volumes

Bernert

Zabel

Pfitzner

2006

Journal of Solid State Chemistry

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“…These compounds can be designed by various combinations of elements in the vicinity of the group IV element, among them, the I 2 -II-IV-VI 4 family has recently received special attention for their potential applications in photovoltaics and optoelectronics. [1][2][3][4][5] For instance, Cu 2 ZnSnS 4 ͑CZTS͒ films posses promising characteristic optical properties: a band gap energy of about 1.5 eV and large absorption coefficient in the order of 10 4 cm −1 . CZTS-based thin film solar cells of efficiency over 6.7% have been fabricated.…”

Section: Introductionmentioning

confidence: 99%

Optical constants of Cu2ZnGeS4 bulk crystals

León¹,

Levcenko²,

Serna³

et al. 2010

Journal of Applied Physics

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The dielectric functions of Cu 2 ZnGeS 4 bulk crystals grown by the Bridgman method were measured over the energy range 1.4 to 4.7 eV at room temperature using variable angle spectroscopic ellipsometry. The observed structures in the dielectric functions were adjusted using the Adachi's model and attributed to interband transitions E 0 , E 1A , and E 1B at ⌫:͑000͒, N͑A͒ :2 / a͑0.5 0.5 0.5͒, and T͑Z͒ :2 / a͑0 0 0.5͒ points of the first Brillouin zone, respectively. The model parameters ͑threshold energy, strength, and broadening͒ have been determined using the simulated annealing algorithm. The decrease in the first gap, E 0 , has been attributed to a higher Ge-S hybridization. The spectral dependence of the complex refractive index, the absorption coefficient, and the normal-incidence reflectivity were also derived.

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Structural Properties

Adachi

2015

Earth‐Abundant Materials for Solar Cells

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Phase relations in the quasi-binary Cu2GeS3–ZnS and quasi-ternary Cu2S–Zn(Cd)S–GeS2 systems and crystal structure of Cu2ZnGeS4

Cited by 105 publications

References 53 publications

Mixed crystals in the system Cu2MnGexSn1−xS4: Phase analytical investigations and inspection of tetrahedra volumes

Mixed crystals in the system Cu2MnGexSn1−xS4: Phase analytical investigations and inspection of tetrahedra volumes

Optical constants of Cu2ZnGeS4 bulk crystals

Structural Properties

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