Phase-Locked Image Acquisition In Thermography

Kuo, P. K.; Ahmed, T.; Jin, Han; Thomas, R. L.

doi:10.1117/12.948970

Cited by 26 publications

(14 citation statements)

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“…Therefore, DPCT was later replaced by IR camera−based lock−in thermography (LIT). This technique was developed already before it was introduced to pho− tovoltaics [16] and since then mainly used in non−destruc− tive testing, hence for "looking below the surface of bodies" [17]. In the following LIT was also used for investigating local leakage currents in integrated circuits [18] and in solar cells [19].…”

Section: Introductionmentioning

confidence: 99%

Understanding the current-voltage characteristics of industrial crystalline silicon solar cells by considering inhomogeneous current distributions

Breitenstein

2013

Opto-Electronics Review

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Solar cells made from multi- or mono-crystalline silicon wafers are the base of today’s photovoltaics industry. These devices are essentially large-area semiconductor p-n junctions. Technically, solar cells have a relatively simple structure, and the theory of p-n junctions was established already decades ago. The generally accepted model for describing them is the so-called two-diode model. However, the current-voltage characteristics of industrial solar cells, particularly of that made from multi-crystalline silicon material, show significant deviations from established diode theory. These deviations regard the forward and the reverse dark characteristics as well as the relation between the illuminated characteristics to the dark ones. In the recent years it has been found that the characteristics of industrial solar cells can only be understood by taking into account local inhomogeneities of the dark current flow. Such inhomogeneities can be investigated by applying lock-in thermography techniques. Based on these and other investigations, meanwhile the basic properties of industrial silicon solar cells are well understood. This contribution reviews the most important experimental results leading to the present state of physical understanding of the dark and illuminated characteristics of multi-crystalline industrial solar cells. This analysis should be helpful for the continuing process of optimizing such cells for further increasing their energy conversion efficiency.

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Section: Introductionmentioning

confidence: 99%

Understanding the current-voltage characteristics of industrial crystalline silicon solar cells by considering inhomogeneous current distributions

Breitenstein

2013

Opto-Electronics Review

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“…Note that a bump with a very low contact resistance to the base will not lead to a pseudo shunt, since its contact resistance R is very low. On the other hand, also a bump with a very high contact resistance will not lead to a pseudo shunt, since the amount of current I flowing through it is too low [see (1)]. Hence, the appearance of pseudo shunts is not very reproducible and strongly depends on the surface condition of the chuck.…”

Section: Measurements and Resultsmentioning

confidence: 99%

“…A FTER the introduction of lock-in thermography (LIT) in the late 1980s by Kuo et al and its specialization for solar cell applications by Breitenstein et al in the 1990s [1], [2], camera-based LIT imaging nowadays is a widely distributed method for research and development in solar cell science and industry [3]. Its advantages are the broad spectrum of qualitative and quantitative applications, for instance, series resistance imaging, power loss analysis, excess carrier lifetime and trap density imaging, measurements of local current density-voltage (J-V) curves of solar cells, and investigations of noncontacted p-n junctions [3]- [10].…”

Section: Introductionmentioning

confidence: 98%

Pseudo Shunts Interfering Lock-In Thermography Investigations of Solar Cells: Characterization and Prevention

Bauer

Wägele

Gase³

et al. 2014

IEEE J. Photovoltaics

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Pseudo shunts are artifacts, which may occur during lock-in thermography (LIT) measurements of solar cells. They are caused at the interface between the solar cell and the sample holder or at current feed-in points and may affect LIT investigations detrimentally, leading to misinterpretation of LIT images. The apparent current density-voltage (J-V) characteristics of pseudo shunts show a significantly steeper slope than that of real shunts, and even of good parts of the cell, and cannot be fitted by the common oneor two-diode models. The cause of pseudo shunts is found to be a local contact on the backside of wafer-based silicon solar cells to the chuck, surrounded by a noncontacted region. A method is proposed to prevent the appearance of pseudo shunts.

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“…Therefore, DPCT was later replaced by IR camera-based lock-in thermography (LIT). This technique was developed already before it was introduced to photovoltaics (Kuo et al, 1988), and since then it was mainly used in nondestructive testing, hence for "looking below the surface of bodies" (Busse et al, 1992). In the following, LIT was also used for investigating local leakage currents in integrated circuits (Breitenstein et al, 2000) and in solar cells (Breitenstein et al, 2001).…”

Section: Introduction and Chapter Methodologymentioning

confidence: 99%

The Physics of Industrial Crystalline Silicon Solar Cells

Breitenstein¹

2013

Semiconductors and Semimetals

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Phase-Locked Image Acquisition In Thermography

Cited by 26 publications

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Understanding the current-voltage characteristics of industrial crystalline silicon solar cells by considering inhomogeneous current distributions

Understanding the current-voltage characteristics of industrial crystalline silicon solar cells by considering inhomogeneous current distributions

Pseudo Shunts Interfering Lock-In Thermography Investigations of Solar Cells: Characterization and Prevention

The Physics of Industrial Crystalline Silicon Solar Cells

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