Phase formation of cubic silicon carbide from reactive silicon–carbon multilayers

Abstract

Silicon carbide layers were fabricated using self-propagating high-temperature synthesis of binary silicon-carbon based reactive multilayers. The silicon and carbon bilayers were fabricated with two different bilayer thicknesses. They are deposited by magnetron sputtering in an alternating layer system with a total thickness of 1 μm. The entire system is annealed by rapid thermal annealing at different temperatures ranging from 500 to 1100 °C. From XRD analysis we could find that the formation of the silicon carbide phase was initiated from 700 °C. With increasing bilayer thickness the silicon carbide phase formation was partially suppressed by the silicon recrystallization due to resulting lower carbon diffusion into silicon. The transformation process proceeds in a four-step process: densification/recrystallization, interdiffusion, nucleation and transformation. From this, it was noted that when compared to low bilayer thickness samples, the formation of the silicon carbide phase is delayed with increasing bilayer thickness and needs higher reaction initiation temperatures. Graphical abstract

All Screen Printed and Flexible Silicon Carbide NTC Thermistors for Temperature Sensing Applications

“…The peaks observed at 2θ = 39.6°, 42°, and 71.2°correspond to the 002, 200, and 311 crystalline planes of the 3C − SiC cubic crystal structure, consistent with the (International Centre for Diffraction Data) ICDD card: 04-002-9070 [54,55]. Additionally, the presence of 2H − SiC peaks at 2θ = 45°(015) and 49°(016), as per the ICDD card: 04-008-2392 [56], may potentially be attributed to a blending of the two phases formed during the nanoparticle fabrication process [57]. The spectral results suggest an approximate 9:1 ratio between the two phases, respectively.…”

Review—Silicon Carbide Thin Film Technologies: Recent Advances in Processing, Properties, and Applications: Part II. PVD and Alternative (Non-PVD and Non-CVD) Deposition Techniques

“…SiC thin films formed from 1 μm-thick Si-C bilayer stacks for applications in quantum electronics and photonics. 55 • Biological and Medical Applications:…”

“…SiC thin films formed from a 1 μm-thick Si-C bilayer stack for applications as functional ceramic material. 55 • Free-standing SiC membranes for sensing applications in harsh environments. 56 a-SiC.-S. Vry et al 55 studied the high-temperature pyrolysis of cross-linked Silres H62C methyl-phenyl-vinyl-hydrogen, primarily a highly branched polysiloxane (polysilsesquioxane), to yield a-SiC ceramic for incorporation in 3D-printing applications.…”

“…55 • Free-standing SiC membranes for sensing applications in harsh environments. 56 a-SiC.-S. Vry et al 55 studied the high-temperature pyrolysis of cross-linked Silres H62C methyl-phenyl-vinyl-hydrogen, primarily a highly branched polysiloxane (polysilsesquioxane), to yield a-SiC ceramic for incorporation in 3D-printing applications. The polysilsesquioxane was cross-linked starting at 180 °C by hydrosilylation between silyl groups (8.4% of the total functional groups) and vinyl groups (12.0% of the total functional groups), and included a nonnegligible ethoxy concentration (2.4% of the total functional groups).…”

“…Shekhawat et al 55 fabricated polycrystalline 3C-SiC films with three dominant orientations [3C-SiC(111), 3C-SiC(220) and 3C-SiC (311)] using self-propagating high-temperature synthesis from binary Si-and C-based reactive multilayers. The Si and C bilayers were each fabricated via magnetron sputtering at room temperature at two different thicknesses (5 and 50 nm).…”