Phase field simulations of ferroelectrics domain structures in PbZrxTi1−xO3 bilayers

Xue, Fei; Wang, Jianjun; Gao, Sheng; Huang, Esther; Cao, Ye; Huang, Hsin‐Hui; Munroe, Paul; Mahjoub, Reza; Li, Yulan; Valanoor, Nagarajan; Chen, Lei

doi:10.1016/j.actamat.2013.01.038

Cited by 52 publications

(38 citation statements)

References 44 publications

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“…In order to describe the temporal and spatial evolution of the spontaneous polarization, the time-dependent Ginzburg-Landau equation is employed in this study 26 :…”

Section: Phase Field Methods Of Ferroelectric Thin Filmsmentioning

confidence: 99%

Domain structures of ferroelectric films under different electrical boundary conditions

Zhou

2015

AIP Advances

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A two-dimensional phase field simulation of ferroelectric films is used that incorporates Landau-Devonshire energy, gradient energy and depolarization electrical energy. A new intermediate electrical boundary condition is firstly presented to study the effects on domain structures of ferroelectric films. Two-dimensional simulations of domain structures are carried out under the open circuit (OC), short circuit (SC) and intermediate (IM) electrical boundary conditions. The simulation results show that there are multi-vortices domains and 180° multi-stripes domains under OC and SC electrical boundary condition, respectively. And there is a transition from multi-vortices domains to 180° multi-stripes domains under the IM electrical boundary condition due to competition between the elastic energy and depolarization electrical energy in the films. The present IM electrical boundary condition can completely characterize different degrees of compensation for surface charges by the electrodes and further describe the effect on the depolarization electrical energy. It can also be reduced to OC and SC electrical boundary conditions. Hence, for nano-thin ferroelectric films, the IM electrical boundary condition plays an important role in the formation of domain structures.

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“…In order to describe the temporal and spatial evolution of the spontaneous polarization, the time-dependent Ginzburg-Landau equation is employed in this study 26 :…”

Section: Phase Field Methods Of Ferroelectric Thin Filmsmentioning

confidence: 99%

Domain structures of ferroelectric films under different electrical boundary conditions

Zhou

2015

AIP Advances

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“…Combined with relatively large (10-100 pm/V) piezoelectric constants, this made PFM the leading technique for almost two decades and enabled the rapid development of this field. An important component of this progress was the emergence of effective phase-field models that allowed simulation of ferroelectric domain dynamics as a function of global (temperature, pressure) [171][172][173]394 and local (tip bias, tip pressure) 164,172,358,359,395 parameters and hence provide insight into local switching mechanisms. 306,396,397 Recent emergence of phase field models for combined ferroelectric-semiconductor and ferroelectric-surface electrochemical behaviors offers numerous future opportunities.…”

Section: Discussionmentioning

confidence: 99%

Ferroelectric or non-ferroelectric: Why so many materials exhibit “ferroelectricity” on the nanoscale

Vasudevan

Balke

Maksymovych

et al. 2017

Applied Physics Reviews

262

206

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Ferroelectric materials have remained one of the foci of condensed matter physics and materials science for over 50 years. In the last 20 years, the development of voltage-modulated scanning probe microscopy techniques, exemplified by Piezoresponse force microscopy (PFM) and associated time-and voltage spectroscopies, opened a pathway to explore these materials on a single-digit nanometer level. Consequently, domain structures, walls and polarization dynamics can now be imaged in real space. More generally, PFM has allowed studying electromechanical coupling in a broad variety of materials ranging from ionics to biological systems. It can also be anticipated that the recent Nobel prize 1 in molecular electromechanical machines will result in rapid growth in interest in PFM as a method to probe their behavior on single device and device assembly levels. However, the broad introduction of PFM also resulted in a growing number of reports on nearly-ubiquitous presence of ferroelectric-like phenomena including remnant polar states and electromechanical hysteresis loops in materials which are non-ferroelectric in the bulk, or in cases where size effects are expected to suppress ferroelectricity. While in certain cases plausible physical mechanisms can be suggested, there is remarkable similarity in observed behaviors, irrespective of the materials system. In this review, we summarize the basic principles of PFM, briefly discuss the features of ferroelectric surfaces salient to PFM imaging and spectroscopy, and summarize existing reports on ferroelectric-like responses in non-classical ferroelectric materials. We further discuss possible mechanisms behind observed behaviors, and possible experimental strategies for their identification.3

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“…Тем не менее, исследования двухслой-ных пленок Ba x Sr (1−x ) TiO 3 с различным значением x не привели к ожидаемой суперпозиции температурной зависимости диэлектрической проницаемости в таких гетероструктурах по сравнению с однослойными [10]. Одним из направлений, связанным с поисками путей эффективного управления свойствами гетероструктур на основе сегнетоэлектриков, является " доменная инжене-рия" -управление свойствами через изменение домен-ной конфигурации под действием двумерных напряже-ний [4,[11][12][13]. Возникновение спонтанной деформации в результате первого фазового перехода после осажде-ния и формирование доменной структуры естественно влияет на конечные двумерные деформационные поля.…”

Section: Introductionunclassified

Особенности Сегнетоэлектрического Состояния В Двухслойных Гетероструктурах На Основе Титаната Бария-Стронция

Стрюков¹,

Мухортов²,

Головко³

et al. 2018

Физика Твердого Тела

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The structural properties of one- and two-layer heterostructures based on the barium–strontium titanate of various compositions deposited by the Frank–Van der Merve on a magnesium oxide substrate have been studied. The heterostructures have been prepared by the rf sputtering of the stoichiometric ceramic targets in a Plazma 50 SE deposition system. The principal difference of this method of deposition from known analogs is that the growth of single-crystal films occurs from a disperse oxide phase formed in the plasma of a high-current rf discharge during the ceramic target sputtering at the cluster level. The peculiarities of the manifestation of the ferroelectric state in the two-layer heterostructures when changing the sequence order of the films with various compositions of barium–strontium titanate.

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Phase field simulations of ferroelectrics domain structures in PbZrxTi1−xO3 bilayers

Cited by 52 publications

References 44 publications

Domain structures of ferroelectric films under different electrical boundary conditions

Domain structures of ferroelectric films under different electrical boundary conditions

Ferroelectric or non-ferroelectric: Why so many materials exhibit “ferroelectricity” on the nanoscale

Особенности Сегнетоэлектрического Состояния В Двухслойных Гетероструктурах На Основе Титаната Бария-Стронция

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