2019
DOI: 10.1088/1361-665x/aafff8
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Phase-field modeling of domain evolution in ferroelectric materials in the presence of defects

Abstract: The properties of ferroelectric devices are strongly influenced, besides crystallographic features, by defects in the material. To study this effect, a fully coupled electromechanical phase-field model for 2D ferroelectric volume elements has been developed and implemented in a Finite Element code. Different kinds of defects were considered: holes, point charges and polarization pinning in single crystals, as well as grain boundaries in polycrystals, without and with additional dielectric interphase. The impac… Show more

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Cited by 26 publications
(13 citation statements)
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“…In contrast to the above-mentioned simulations, in this work we considered self-consistently a time-evolution of a self-organized domain structure coupled with the migration of mobile oxygen vacancies in an acceptor-doped tetragonal barium titanate without introduction of artificial excess charges. Among other effects, the formation of charged 180°-domain walls was established which might be due to the account of the electrostriction and flexoelectricity in contrast to the previous studies [33,78,79,80]. The development of the system may be divided in the following subsequent stages:…”
Section: Discussionmentioning
confidence: 87%
“…In contrast to the above-mentioned simulations, in this work we considered self-consistently a time-evolution of a self-organized domain structure coupled with the migration of mobile oxygen vacancies in an acceptor-doped tetragonal barium titanate without introduction of artificial excess charges. Among other effects, the formation of charged 180°-domain walls was established which might be due to the account of the electrostriction and flexoelectricity in contrast to the previous studies [33,78,79,80]. The development of the system may be divided in the following subsequent stages:…”
Section: Discussionmentioning
confidence: 87%
“…For example, in Ref. 33 other shapes of extended defects were investigated and found to have similar effect on E c .…”
Section: Resultsmentioning
confidence: 99%
“…For example, the prescribed voltage and mechanical displacements, such as the diameter and position of the tip, could be entered directly into the latent space between the encoder and the decoder. Finally, other extensions should be made to address the complexity of ferroelectric simulation, for example, the introduction of crystal and grain orientation, 31 charged defects, 31 and varying dielectric and elastic coefficients 25 are examples of potential improvements.…”
Section: ■ Conclusionmentioning
confidence: 99%