Phase field microelasticity model of dislocation climb: Methodology and applications

Ke, Jia-Hong; Boyne, A.; Wang, Y.; Kao, C. R.

doi:10.1016/j.actamat.2014.07.003

Cited by 34 publications

(13 citation statements)

References 45 publications

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“…On the other hand, we believe that these boundary conditions are reasonable approximations. The equilibrium boundary condition for vacancy is equivalent to treating the dislocation as a perfect sink, which have been used in prior works 26,27 and proven to be valid. The zero normal-flux boundary condition is to maintain the conservation law of Si atoms, considering the fact that Si atoms cannot be created or be annihilated at an isolated dislocation.…”

Section: Simulation Resultsmentioning

confidence: 99%

Mesoscale modeling of vacancy-mediated Si segregation near an edge dislocation in Ni under irradiation

Trinkle

2017

Phys. Rev. B

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Section: Simulation Resultsmentioning

confidence: 99%

Mesoscale modeling of vacancy-mediated Si segregation near an edge dislocation in Ni under irradiation

Trinkle

2017

Phys. Rev. B

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“…As an increasing number of defects are produced in the surface layer during irradiation, dislocations can be driven by a defects-induced stress field [22]. Figure 3 shows the configuration of dislocation in irradiated samples.…”

Section: Dislocation Configuration In Irradiated Samplesmentioning

confidence: 99%

The Formation of Microcrystal in Helium Ion Irradiated Aluminum Alloy

et al. 2019

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A microstructure variation in Al-1060 alloy after helium ion irradiation was revealed by a transmission electron microscope (TEM). The result shows that ion irradiation produced dislocations, dislocation loops, cavities and microcrystals in the irradiated layer. Dislocation-defect interactions were portrayed, especially the pinning effect of a dislocation loop and cavity on moving dislocation. Irradiation-induced stress was recognized as the main factor which impacted on the interaction of defect. Based on the dislocation inhibited with irradiation defects, the mechanism of microcrystal formation was proposed.

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“…The appearance of multiple η-Cu6Sn5 variants (low symmetry) on unidirectional Cu substrates (high symmetry) have been identified by transmission electron microscopy (TEM) analysis [37], but the orientation relationship between the η-Cu6Sn5 and Cu substrate and the heteroepitaxial constraint from the substrate have never been connected to the experimentally observed morphological patterns of IMC and incorporated into simulations of Cu-Sn interfacial reactions. To fully account for this effect and characterize the growth of different orientation variants of IMCs on crystalline substrates, it is highly desirable to integrate the available phase-field model of solder system with the microelasticity theory [29] that has been applied successfully to study coherent phase transformations in solids [38][39][40][41], epitaxial/heteroepitaxial film growth [42][43][44][45][46][47][48][49], dislocation/defect dynamics [50][51][52], as well as phase separation in LiFePO4 nanoparticles [53,54].…”

Section: Introductionmentioning

confidence: 99%

Pattern formation during interfacial reaction in-between liquid Sn and Cu substrates – A simulation study

Gao

Kao

et al. 2016

Acta Materialia

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Heteroepitaxial formation of η-Cu6Sn5 intermetallic compound (IMC) on unidirectional Cu has been found to exhibit remarkable microstructural features and provide opportunities for microstructure control of microelectronic interconnects, but the crystallographic origin and formation mechanism of such morphological patterns are still unclear. Here we investigate pattern formation during interfacial reactions in between liquid Sn and two types of unidirectional Cu substrates, (001) and (111), by using a combination of crystallographic analysis, theory of microelasticity and phase-field simulations. The simulation results show that each symmetry-related η-Cu6Sn5 variant grows along the direction of best atomic site matching with the substrates. No spatial alignment can be achieved when the growth takes place without heteroepitaxial constraints. In addition, anisotropy in interfacial energy between the liquid Sn and IMC is found to lead to faceted morphology. Further, the habit planes of η-Cu6Sn5 precipitates and kinematic compatibility across the interfaces are analyzed theoretically and found to be consistent with the simulations. These simulation predictions demonstrate excellent agreements with experimental observations.

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Phase field microelasticity model of dislocation climb: Methodology and applications

Cited by 34 publications

References 45 publications

Mesoscale modeling of vacancy-mediated Si segregation near an edge dislocation in Ni under irradiation

Mesoscale modeling of vacancy-mediated Si segregation near an edge dislocation in Ni under irradiation

The Formation of Microcrystal in Helium Ion Irradiated Aluminum Alloy

Pattern formation during interfacial reaction in-between liquid Sn and Cu substrates – A simulation study

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