Phase Evolution of Boron Nitride and Carbide during Chemical Vapor Deposition

Abstract

in films of Boron Nitride (BN) and Boron Carbide (BC) possess properties that make them attractive for various applications. Epitaxially grown BN exhibits potential for optoelectronic devices, as piezoelectric materials, and graphene technology. Epitaxial BC is a semiconductor that could allow bandgap tuning and has potential applications in thermoelectric and optoelectronic devices. Both BN xi