Phase equilibria in the Cu2SnSe3–SnSe2–ZnSe system

Dudchak, I.V.; Піскач, Л. В.

doi:10.1016/s0925-8388(02)01024-1

Cited by 105 publications

(70 citation statements)

References 4 publications

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“…The phase diagram in Fig. 1 is adapted from [23]. It is assumed that the phase diagram is essentially the same for the selenide and the sulphide compounds.…”

Section: Comparison With the Phase Diagrammentioning

confidence: 99%

“…It is assumed that the phase diagram is essentially the same for the selenide and the sulphide compounds. The kesterite existence region according to [23] and [24] is indicated by a small blue ellipse in the centre. Along the blue lines two phase regions exist: kesterite + ZnS(e), kesterite + SnS(e) 2 , kesterite + Cu 2 SnS(e) 3 , kesterite + Cu 2 S(e).…”

Section: Comparison With the Phase Diagrammentioning

confidence: 99%

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Why are kesterite solar cells not 20% efficient?

2013

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Although kesterite solar cells show the same range of band gaps as the related chalcopyrites, their efficiencies have so far reached only 10%, compared to 20% for the chalcopyrites. A review of the present literature indicates that several non-ideal recombination channels pose the main problem: (i) recombination at the interface between the kesterite and the CdS buffer. This is very likely due to an unfavourable clifflike band alignment between the absorber and the buffer. However, for pure selenide absorbers, this recombination path is not dominating, which could be due to a spike-like band alignment at the absorber-buffer interface. (ii) A second major recombination becomes obvious in a photoluminescence maximum well below the band gap, even in record efficiency absorbers. This is either due to a very high density of defects, comparable to the density of states in the band, or to stannite inclusions. In view of the phase diagram, secondary phases are not likely the source of the low energy emission.Only in sulphide kesterite a non-stoichiometric SnS phase could also cause this low energy radiative recombination.

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“…The phase diagram in Fig. 1 is adapted from [23]. It is assumed that the phase diagram is essentially the same for the selenide and the sulphide compounds.…”

Section: Comparison With the Phase Diagrammentioning

confidence: 99%

Section: Comparison With the Phase Diagrammentioning

confidence: 99%

Why are kesterite solar cells not 20% efficient?

2013

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“…Recently, we proposed to meet this challenge by constructing materials with two structural/functional units, one electrically conducting and the other insulating, one example being Cu-doped chalcopyrite-type CuAlS 2 that has a wide band gap ͑about 3.4 eV͒ and a high . [9][10][11][12] Note that chalcopyrites, having a diamondlike tetrahedral framework structure, already include some low-phonon-conductive materials, such as Cu 2 SnS 3 and Cu 2 SnSe 3 , [13][14][15][16][17] which are used for infrared transmission. Therefore, it would be interesting to investigate whether the low phonon conduction can survive -enhancing doping in these large band-gap p-type semiconductors, thereby providing alternative TE materials.…”

Section: ͒mentioning

confidence: 99%

A wide-band-gap p-type thermoelectric material based on quaternary chalcogenides of Cu2ZnSnQ4 (Q=S,Se)

Liu

Huang

Chen

et al. 2009

Applied Physics Letters

298

271

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Chalcopyritelike quaternary chalcogenides, Cu2ZnSnQ4 (Q=S,Se), were investigated as an alternative class of wide-band-gap p-type thermoelectric materials. Their distorted diamondlike structure and quaternary compositions are beneficial to lowering lattice thermal conductivities. Meanwhile, partial substitution of Cu for Zn creates more charge carriers and conducting pathways via the CuQ4 network, enhancing electrical conductivity. The power factor and the figure of merit (ZT) increase with the temperature, making these materials suitable for high temperature applications. For Cu2.1Zn0.9SnQ4, ZT reaches about 0.4 at 700 K, rising to 0.9 at 860 K.

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“…One possible explanation for the detection of the Zn-rich secondary phase in TEM and not XRD is the structural similarity between CZTSe and the secondary phase. 20 The XRD pattern collected from the CZTSe layer on ITO in Fig. 3(c) shows peaks shifted toward lower angles.…”

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confidence: 94%

High efficiency bifacial Cu2ZnSnSe4 thin-film solar cells on transparent conducting oxide glass substrates

2016

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In this work, transparent conducting oxides (TCOs) have been employed as a back contact instead of Mo on Cu2ZnSnSe4 (CZTSe) thin-film solar cells in order to examine the feasibility of bifacial Cu2ZnSn(S,Se)4 (CZTSSe) solar cells based on a vacuum process. It is found that the interfacial reaction between flourine doped tin oxide (FTO) or indium tin oxide (ITO) and the CZTSe precursor is at odds with the conventional CZTSe/Mo reaction. While there is no interfacial reaction on CZTSe/FTO, indium in CZTSe/ITO was significantly diffused into the CZTSe layers; consequently, a SnO2 layer was formed on the ITO substrate. Under bifacial illumination, we achieved a power efficiency of 6.05% and 4.31% for CZTSe/FTO and CZTSe/ITO, respectively.

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Phase equilibria in the Cu2SnSe3–SnSe2–ZnSe system

Cited by 105 publications

References 4 publications

Why are kesterite solar cells not 20% efficient?

Why are kesterite solar cells not 20% efficient?

A wide-band-gap p-type thermoelectric material based on quaternary chalcogenides of Cu2ZnSnQ4 (Q=S,Se)

High efficiency bifacial Cu2ZnSnSe4 thin-film solar cells on transparent conducting oxide glass substrates

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