Phase equilibria at 1000°C in the AlCSiTi quaternary system: An experimental approach

Viala, J.C.; Peillon, Nathalie; Bosselet, F.; Bouix, J.

doi:10.1016/s0921-5093(97)00002-6

Cited by 73 publications

(24 citation statements)

References 21 publications

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“…The same phases were observed in the sample annealed without capping layer (not shown). The phases observed by XRD in the alloyed contacts are in agreement with the predictions of the phase diagram of the Al-C-Ti-Si quaternary system, which indicates the coexistence of Ti 3 SiC 2 and other compounds (like Al 4 C 3 or Al 3 Ti) upon annealing at 1000°C [44]. The presence of Al 4 C 3 , experimentally observed by Johnson et al [22], has not been detected in our samples, probably due to different annealing conditions.…”

Section: Microstructure Of Ti/al Ohmic Contactssupporting

confidence: 81%

“…Hence, according to the XRD analysis, inside these regions both pure Al and Al 3 Ti may coexist. Furthermore, the ternary phase Ti 3 SiC 2 is observed in both samples, resulting from the interaction of Ti with SiC at such high temperatures [44]. However, while in the sample without capping layer (figure 6a), large Ti 3 SiC 2 grains are located close to the interface with SiC and interrupted by small Al-rich regions, in the sample with capping layer (figure 6b), larger Al-rich regions are found, in some parts forming an almost continous interfacial layer.…”

Section: Microstructure Of Ti/al Ohmic Contactsmentioning

confidence: 91%

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Structural and transport properties in alloyed Ti/Al Ohmic contacts formed on p-type Al-implanted 4H-SiC annealed at high temperature

Frazzetto¹,

Giannazzo²,

Nigro³

et al. 2011

J. Phys. D: Appl. Phys.

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Abstract. In this paper, the transport properties of alloyed Ti/Al Ohmic contacts formed on p-type Al-implanted silicon carbide (4H-SiC) were studied. The morphology of p-type implanted 4H-SiC was controlled by using a capping layer during post-implantation activation annealing at 1700°C. The different morphological conditions does not affect the macroscopic electrical properties of the implanted SiC (like the sheet resistance or the mobility). On the other hand, the improved morphology of implanted SiC allows to achieve a flatter Ti/Al surface and a lower specific contact resistance. The temperature dependence of the specific resistance of the contacts was studied to get physical insights into the carrier transport mechanism at the metal/SiC interface. The fit comparing several models shows that thermionic field emission is the dominant transport mechanism through the metal/SiC interface, and that a reduction of the barrier height from 0.51eV to 0.46 eV is associated to the improvement of the Ohmic properties. Transmission Electron Microscopy analysis showed the presence of a laterally inhomogeneous microstructure of the metal/SiC interface. The reduction of the barrier height could be correlated with the different microstructure of the interfacial region.

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Section: Microstructure Of Ti/al Ohmic Contactssupporting

confidence: 81%

Section: Microstructure Of Ti/al Ohmic Contactsmentioning

confidence: 91%

Structural and transport properties in alloyed Ti/Al Ohmic contacts formed on p-type Al-implanted 4H-SiC annealed at high temperature

Frazzetto¹,

Giannazzo²,

Nigro³

et al. 2011

J. Phys. D: Appl. Phys.

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“…This result indicates that the Ti 3 SiC 2 layer, which is a dominant phase formed by reacting of the Ti-80%Al contact and SiC at 1000 C, has a strong (0001)-oriented texture or hetero-epitaxy on the SiC substrate. Figure 2 shows an isothermal section of the pseudoternary phase diagram of Al-Ti-SiC system at 1000 C constructed by Viala et al 19) based on their experimental measurements of Al-Ti-Si-C quaternary system, where a grey region indicates the existence of binary AlSi-based liquid phases, and thick and fine lines indicates sub-solidus lines and tie-lines, respectively. It is noted that the liquidus line would lie at near the composition region of pure Al as denoted by a symbol L in Fig.…”

Section: Formation Of Ternary Ti 3 Sic 2 Compound On Sicmentioning

confidence: 99%

Growth and Microstructure of Epitaxial Ti<SUB>3</SUB>SiC<SUB>2</SUB> Contact Layers on SiC

et al. 2009

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Growth and microstructure of ternary Ti 3 SiC 2 compound layers on 4H-SiC, which play am important role in formation of TiAl-based ohmic contacts to p-type SiC, were investigated in this study. The Ti 3 SiC 2 layer was fabricated by deposition of Ti/Al contacts (where a slash ''/'' indicates the deposition sequence) on the 4H-SiC(0001) substrate and subsequent rapid thermal anneal at 1000 C in ultra high vacuum. After annealing, reaction products and microstructure of the Ti 3 SiC 2 layer were investigated by X ray diffraction analysis and transmission electron microscopy observations in order to understand the growth processes of the Ti 3 SiC 2 layer and determination of the Ti 3 SiC 2 /4H-SiC interface structure. The Ti 3 SiC 2 layers with hexagonal plate shape were observed to grow epitaxially on the SiC(0001) surface by anisotropic lateral growth process. The interface was found to have a hetero-epitaxial orientation relationship of ð0001Þ TSC ==ð0001Þ S and ½0 1 110 TSC == ½0 1 110 S where TSC and S represent Ti 3 SiC 2 and 4H-SiC, respectively, and have well-defined ledge-terrace structures with low density of misfit dislocations due to an extremely low lattice mismatch of 0.4% between Ti 3 SiC 2 and 4H-SiC.

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“…Moreover, a liquid as an Al-Si alloy containing 0-44%Si forms at 1 000 ˚C in the Al-C-Si-Ti quaternary system [11] . Thus, the addition of Si to the initial powder mixture may improve the synthesis of Ti 3 AlC 2 via a solid-liquid reaction.…”

Section: Resultsmentioning

confidence: 99%

Fabrication of high-purity ternary carbide Ti3AlC2 by spark plasma sintering (SPS) technique

Song

2008

J. Wuhan Univ. Technol.-Mat. Sci. Edit.

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The effect of silicon on synthesis of Ti 3 AlC 2 by spark plasma sintering (SPS) from TiC/ Ti/Al powders was investigated. X-ray diffraction (XRD) and scanning electron microscope (SEM) were used for phase identification and microstructure evaluation. The results show that addition of silicon can considerably accelerate the synthesis reaction of Ti 3 AlC 2 and fully dense, essentially single-phase (purity >98%) polycrystalline Ti 3 AlC 2 could be successfully obtained by sintering 2TiC/1Ti/1Al/0.2Si powders at 1 200-1 250 ˚C under a pressure of 30 MPa. SEM photographs show that the obtained Ti 3 AlC 2 samples from mixtures powders are in plane-shape with a size of about 2-5 m and 10-25 m in the thickness dimension and elongated dimension, respectively.

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Phase equilibria at 1000°C in the AlCSiTi quaternary system: An experimental approach

Cited by 73 publications

References 21 publications

Structural and transport properties in alloyed Ti/Al Ohmic contacts formed on p-type Al-implanted 4H-SiC annealed at high temperature

Structural and transport properties in alloyed Ti/Al Ohmic contacts formed on p-type Al-implanted 4H-SiC annealed at high temperature

Growth and Microstructure of Epitaxial Ti<SUB>3</SUB>SiC<SUB>2</SUB> Contact Layers on SiC

Fabrication of high-purity ternary carbide Ti3AlC2 by spark plasma sintering (SPS) technique

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