Phase-Engineering-Driven Enhanced Electronic and Optoelectronic Performance of Multilayer In<sub>2</sub>Se<sub>3</sub> Nanosheets

Feng, Wei; Gao, Feng; Hu, Yunxia; Dai, Mingjin; Li, He; Wang, Lifeng; Hu, PingAn

doi:10.1021/acsami.8b10194

Cited by 56 publications

(64 citation statements)

References 30 publications

(56 reference statements)

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“…Within them, 2D layered materials have been the most widely studied in recent years owing to the in-plane atoms bonded by strong covalent or ionic bonds and interlayers bonded by weak van der Waals forces, and their smooth surface without chemical dangling bonds, exhibiting excellent electrical, optical and mechanical properties [11][12][13][14]. Ultrathin 2D layered materials are easy to obtain and bandgaps are easy to control benefiting from the unique structure of weak van der Waals forces bonded in interlayers, resulting in great application potential in microelectronics and optoelectronics fields [8,[15][16][17][18][19][20][21][22][23][24][25][26][27][28][29][30]. However, 2D non-layered materials with a broad range of properties have rarely been reported in recent years [31][32][33][34].…”

Section: Introductionmentioning

confidence: 99%

CVD-Grown 2D Nonlayered NiSe as a Broadband Photodetector

et al. 2021

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Two-dimensional (2D) materials have expansive application prospects in electronics and optoelectronics devices due to their unique physical and chemical properties. 2D layered materials are easy to prepare due to the layered crystal structure and the interlayer van der Waals combination. However, the 2D nonlayered materials are difficult to prepare due to the nonlayered crystal structure and the combination of interlayer isotropic chemical bonds, resulting in limited research on 2D nonlayered materials with broad characteristics. Here, a 2D nonlayered NiSe material has been synthesized by a chemical vapor deposition method. The atomic force microscopy study shows that the grown NiSe with a thin thickness. Energy-dispersive X-ray spectroscopy, X-ray photoelectron spectroscopy and transmission electron microscopy results demonstrate the uniformity and high quality of NiSe flakes. The NiSe based photodetector realizes the laser response to 830 nm and 10.6 μm and the maximum responsivity is ~6.96 A/W at room temperature. This work lays the foundation for the preparation of 2D nonlayered materials and expands the application of 2D nonlayered materials in optoelectronics fields.

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Section: Introductionmentioning

confidence: 99%

CVD-Grown 2D Nonlayered NiSe as a Broadband Photodetector

et al. 2021

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“…The bandgap can be tuned by adjusting the layer thickness (Figure 2a). [41,44] Another derived phase, β′, was observed to display reversible thermal transit with the β phase with a thickness ranging from 1 layer to ≈20 layers. [43] However, the reason for the stability of 2D β-In 2 Se 3 is unknown.…”

Section: In 2 O 3 In 2 S 3 In 2 Sementioning

confidence: 99%

2D Materials Based on Main Group Element Compounds: Phases, Synthesis, Characterization, and Applications

Neupane

Jia

et al. 2020

Adv Funct Materials

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2D materials based on main group element compounds have recently attracted significant attention because of their rich stoichiometric ratios and structure motifs. This review focuses on the phases in various 2D binary materials including III-VI, IV-VI, V-VI, III-V, IV-V, and V-V materials. Reducing 3D materials to 2D introduces confinement and surface effects as well as stabilizes unstable 3D phases in their 2D form. Their crystal structures, stability, preparation, and applications are summarized based on theoretical predictions and experimental explorations. Moreover, various properties of 2D materials, such as ferroelectric effect, anisotropic optical and electrical properties, ultralow thermal conductivity, and topological state are discussed. Finally, a few perspectives and an outlook are given to inspire readers toward exploring 2D materials with new phases and properties.

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“…Their potential applications in different fields have been demonstrated. The first class of 2D pS is group III 2 ‐VI 3 ferroelectrics (M 2 X 3 , M = Al, Ga, In; X = S, Se, Te),7,8 and some of them have been synthesized in experiment 4,9–13. Particularly, ferroelectric In 2 Se 3 had been applied to data storage with the switchable polarization, spintronics,9 and visible light absorption 10,14–17.…”

Section: Introductionmentioning

confidence: 99%

“…The first class of 2D pS is group III 2 -VI 3 ferroelectrics (M 2 X 3 , M = Al, Ga, In; X = S, Se, Te), [7,8] and some of them have been synthesized in experiment. [4,[9][10][11][12][13] Particularly, ferroelectric In 2 Se 3 had been applied to data storage with the switchable polarization, spintronics, [9] and visible light absorption. [10,[14][15][16][17] Group III 2 -VI 3 monolayers are also proved to be promising photocatalysts for overall water-splitting with high theoretical solar-to-hydrogen efficiency.…”

mentioning

confidence: 99%

Van der Waals Contact to 2D Semiconductors with a Switchable Electric Dipole: Achieving Both n‐ and p‐Type Ohmic Contacts to Metals with a Wide Range of Work Functions

Shao

Wang

Pan

et al. 2019

Adv Elect Materials

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Two‐dimensional (2D) layered semiconductors with an intrinsic electric dipole p (pS for short), including group III2‐VI3 ferroelectrics and various Janus semiconductors, are attracting increasing attention for their exotic properties and versatile applications. Their potential in metal–semiconductor junctions is revealed. It is demonstrated that, for pS contacting to 2D metals with a wide range of work‐functions, Schottky‐barrier‐free (SB‐free) and tunable n‐ to p‐type contacts can be obtained, which is important for complementary metal‐oxide‐semiconductor logical circuitry. As expected, low (high) work‐function (WF) metals form n‐type (p‐type) SB‐free contacts to pS. What is unexpected is the behavior of medium‐WF metal‐pS junctions (MpSJ); that is, by switching the polarization in pS, both n‐ and p‐type SB‐free contacts can be obtained by the same pS contacting to metals with a wide range of WF. More importantly, MpSJ with bilayer pS can form both n‐ and p‐type SB‐free contacts. These findings, SB‐free and contact‐type‐tunable of MpSJ for metals with a wide range of work‐functions, demonstrate the great potential of 2D pS for device applications.

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Phase-Engineering-Driven Enhanced Electronic and Optoelectronic Performance of Multilayer In₂Se₃ Nanosheets

Cited by 56 publications

References 30 publications

CVD-Grown 2D Nonlayered NiSe as a Broadband Photodetector

CVD-Grown 2D Nonlayered NiSe as a Broadband Photodetector

2D Materials Based on Main Group Element Compounds: Phases, Synthesis, Characterization, and Applications

Van der Waals Contact to 2D Semiconductors with a Switchable Electric Dipole: Achieving Both n‐ and p‐Type Ohmic Contacts to Metals with a Wide Range of Work Functions

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Phase-Engineering-Driven Enhanced Electronic and Optoelectronic Performance of Multilayer In2Se3 Nanosheets

Cited by 56 publications

References 30 publications

CVD-Grown 2D Nonlayered NiSe as a Broadband Photodetector

CVD-Grown 2D Nonlayered NiSe as a Broadband Photodetector

2D Materials Based on Main Group Element Compounds: Phases, Synthesis, Characterization, and Applications

Van der Waals Contact to 2D Semiconductors with a Switchable Electric Dipole: Achieving Both n‐ and p‐Type Ohmic Contacts to Metals with a Wide Range of Work Functions

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Phase-Engineering-Driven Enhanced Electronic and Optoelectronic Performance of Multilayer In₂Se₃ Nanosheets