Phase, domain, and microstructures in Sr²⁺ substituted low‐temperature sintering PZT‐based relaxor ferroelectrics

Abstract

The Ag-Pd internal electrode of multilayer piezoelectric ceramics needs to be sintered below 1000°C, and lead wires and components need to be welded with leadfree solder at 260°C. PNN-PMW-PZT-xSr piezoelectric ceramics with high Curie temperature (T c > 260°C) were synthesized at a low sintering temperature (960°C) to meet the requirements of multilayer piezoelectric devices. The relationship between structures (phase, domain, and microstructures) and electrical properties (piezo/ferroelectric properties, and dielectric relaxation) in the Sr 2+ substituted ceramics was investigated. Rietveld refinement and Raman spectra show that Sr 2+ substitution can cause the phase change and increase the force constant of [BO 6 ] octahedron. The piezoelectric response increases with increasing the content of the tetragonal phase (CTP) in the rhombohedral-tetragonal (R-T) coexisted ceramics. The ceramics with 0.6 mol% Sr 2+ substitution have minimum activation energy for domain wall movement (E a ) of 0.0362 eV which favors the formation of nanometer-sized domains, and possess excellent electrical properties (d 33 = 623 pC/N, d 33 * =783 pm/V, T c =295°C).The higher the CTP, the lower the E a . The lower E a favors the rotation of polarization direction and extension, and is beneficial to the generation of the nanometer-size domains, resulting in high piezoelectric properties.

Decoding intrinsic and extrinsic contributions for high piezoelectricity of CBT-based piezoelectric ceramics

“…In general, the increased grain size improves the domain size and promotes the rotation of the domain, increases the external contribution on piezoelectricity, and results in higher piezoelectric properties. 26 The local domain switching of the sample is further observed in the mapping mode of switching spectroscopy PFM (SS-PFM), as shown in Fig. 4a.…”

“…In general, the increased grain size improves the domain size and promotes the rotation of the domain, increases the external contribution on piezoelectricity, and results in higher piezoelectric properties. 26…”

Ultra‐high‐temperature piezoelectric responses and ultra‐high thermal stability of piezoelectricity in ceramic PbZr0.54Ti0.46O3

“…2 Piezoelectric materials often exhibit high piezoelectric performance in the morphotropic phase boundary (MPB) region, so most of the doping elements in piezoelectric materials are applied in the MPB. 3 Generally, the higher the T C , the lower the d 33 value. There are relatively few studies on rare-earth doping in piezoelectric ceramics with a single-phase structure deviating from the MPB.…”

“…Rare‐earth ion doping has been reported to cause local structural heterogeneity in lead‐based ABO 3 ‐type perovskite ferroelectrics and achieve high performance 2 . Piezoelectric materials often exhibit high piezoelectric performance in the morphotropic phase boundary (MPB) region, so most of the doping elements in piezoelectric materials are applied in the MPB 3 . Generally, the higher the T C , the lower the d 33 value.…”

Perovskite Relaxor‐Dependent Contributions to Piezoelectric Power Generation of Multiple PZT Tape‐Based Cantilever Structures at Nonresonant Frequency

“…These modifications include adjusting the composition of PZT by incorporating perovskite relaxors, such as Pb(B 1 ,B 2 )O 3 , where B 1 = Mg +2 , Fe +3 , Zn +2 , Ni +2 , or Co +2 , and B 2 = Nb +5 or Ta +5 . [14][15][16][17][18][19][20] In particular, the isovalent substitution of the Zr site with B +2 cations and the replacement of the Ti site with donor pentavalent B +5 have been widely studied in perovskite PZT, which have substantially improved the piezoelectric charge coefficients while maintaining strong MPB behavior. [21,22] However, limited reports exist on the use of PZT-relaxor systems as power-generation devices.…”