Phase distribution chromatography. Possibilities and limitations

Greschner, Georg S.

doi:10.1007/3-540-15786-7_6

Cited by 2 publications

(2 citation statements)

References 22 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Antimony, as a dopant in silicon, decreases the oxygen content in heavily doped melts. The mechanisms involved have been analyzed thermodynamically and experimentally (3). The main reason for the oxygen reduction is the thermodynamic effect of antimony on the equilibria involved (3).…”

Section: Discussionmentioning

confidence: 99%

See 1 more Smart Citation

Langmuir Probe Measurements and Characterization of Silicon Etching in SF 6 / O 2 Discharges

Kopalidis

Jorné

1992

J. Electrochem. Soc.

View full text Add to dashboard Cite

The reactive ion etching of silicon in SF~/O2 mixtures is investigated experimentally. Electrical measurements, using a Langmuir probe, provide the plasma density of the discharge, for various settings of pressure and oxygen percentage. The plasma density ranges between 4 • 109 and 1.2 • 101~ cm -~. Information on the chemical composition of the discharge is obtained using a mass spectrometer. The lower electrode self-bias voltage ranges between 0 and 590 V and the etching rate between 100 and 17,000 A/min. The variation of the relative contribution of chemical etching and ion bombardment to the overall etching rate is demonstrated, as the process parameters are changed. Etching uniformity is also studied and the etching rate is found to be higher near the edge of the electrode. ) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 142.58.129.109 Downloaded on 2015-05-30 to IP ABSTRACTOxygen incorporation into Czochralski silicon crystals during crystal growth is influenced by reactions at the crucible interface. In the present study it was found that different dopants have different effects on these reactions, both in sealed ampuls and in Czochralski crucibles. Different reaction products and morphologies are formed along the interface depending on dopant types and levels. It was concluded that some of these reactions can affect the oxygen concentration in the melt. The dopants investigated were B, A1, Ga, In, Ge, Sn, P, As, Sb, and Bi.

show abstract

Section: Discussionmentioning

confidence: 99%

“…Several ways to overcome this problem have been presented in the literature. Behringer et al (3) have etched trenches with substantially vertical sidewalls in silicon, using CF+ reactive ion etching (RIE). The F atom concentration of the discharge was kept low by operating at a low gas flow rate.…”

mentioning

confidence: 99%

Langmuir Probe Measurements and Characterization of Silicon Etching in SF 6 / O 2 Discharges

Kopalidis

Jorné

1992

J. Electrochem. Soc.

View full text Add to dashboard Cite

show abstract

Separation of linear and star‐shaped polystyrenes by phase distribution chromatography

Boye

Scharfenberg

Lederer

2010

J of Separation Science

View full text Add to dashboard Cite

The phase distribution chromatographic technique was optimized and applied for the separation of linear and star-shaped polystyrene (PS). For this purpose non-crosslinked, ultra high molecular weight PS coated on different supporting materials was used. The stability of the coating under chromatographic conditions was tested by thermo gravimetric analysis and microscopic techniques. The modification of different column packing materials was tested. Separation according to branching was indicated for different molecular weights of linear and star-shaped PS. The resolution of the separation was improved by changing the density of the stationary phase and the temperature. The separation results were supported by cloud point measurements and the determination of the critical conditions for linear and star-polymers at the same molecular weight.

show abstract

Phase distribution chromatography. Possibilities and limitations

Cited by 2 publications

References 22 publications

Langmuir Probe Measurements and Characterization of Silicon Etching in SF 6 / O 2 Discharges

Langmuir Probe Measurements and Characterization of Silicon Etching in SF 6 / O 2 Discharges

Separation of linear and star‐shaped polystyrenes by phase distribution chromatography

Contact Info

Product

Resources

About