Phase diagram of the holmium-silicon binary system and physical properties of holmium silicides up to 1050 °C

Eremenko, V. N.; Listovnichii, V.E.; Luzan, S. P.; Buyanov, Yu. I.; Martsenyuk, P. S.

doi:10.1016/0925-8388(94)05035-x

Cited by 34 publications

(31 citation statements)

References 11 publications

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“…Analysis by SEM/EDS showed that this phase contained Sn and Nd, with an atomic ratio of approximately 3:1. Based on the Sn-Nd alloy phase diagram, 18 this composition corresponded to the compound Sn 3 Nd. The size of the irregular squares of Sn 3 Nd was approximately 20-50 lm.…”

Section: Resultsmentioning

confidence: 99%

“…7 In order to bring about this goal, the solubility of the RE element in tin and disperse precipitation are necessary. However, based on the Sn-Nd binary phase diagram, 18 it is difficult to obtain this goal at a normal cooling rate. Since there is little solubility of Nd in solid tin, if the solidification rate of the alloy is not extremely rapid, Sn 3 Nd with a high melting point (1170°C) will rapidly precipitate and grow in the melt at high temperature.…”

Section: The Prospects Of the Re-bearing Soldersmentioning

confidence: 99%

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Tin Whisker Growth on the Surface of Sn-0.7Cu Lead-Free Solder with a Rare Earth (Nd) Addition

Xian

2009

Journal of Elec Materi

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The phenomenon of rare earth (RE) additions inducing whisker growth in Sn-0.7Cu-Nd (0.1-5 wt.%Nd) solder is reported. The results showed that Nd exists as Sn 3 Nd in the microstructure of the solder alloys. A snowflake-like Sn 3 Nd was observed when Nd £ 0.5 wt.%. After exposure to ambient conditions, the Nd-bearing alloys have a strong tendency toward whisker growth, with a short incubation time for whisker nucleation (only several hours). All whiskers originated from the Sn-Nd compound, where whiskers grew relatively fast; the average growth rate of the five longest whiskers was approximately 4 Å /s, and a 190 lm whisker was observed within 480 h. Based on these results, it was predicted that whisker growth would be inevitable for all RE-bearing solders. The cause of this phenomenon is also discussed. Finally, the authors suggest that any solders doped with RE should be carefully considered again.

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Section: Resultsmentioning

confidence: 99%

Section: The Prospects Of the Re-bearing Soldersmentioning

confidence: 99%

Tin Whisker Growth on the Surface of Sn-0.7Cu Lead-Free Solder with a Rare Earth (Nd) Addition

Xian

2009

Journal of Elec Materi

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confidence: 99%

“…According to [2], the other HoSi 2-a disilicide also has a small homogeneity range rich in silicon with the boundary at HoSi 1.82 . The composition of another silicon-rich holmium silicide, which is referred to as "Ho 4 Si 5 " in [1][2][3][4], has been ascertained in [6] and defined as Ho 3 Si 4 and its own structural type has been established. The lattice parameters of Ho 4 Si 5 determined in [1-4] and those of Ho 3 Si 4 reported in [6] agree well with each other.…”

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confidence: 99%

Thermodynamic properties of silicon-rich holmium silicides

Goncharuk

Sidorko

Buyanov

2009

Powder Metall Met Ceram

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The free Gibbs energy, enthalpy, and entropy of formation of silicon-rich holmium silicides HoSi 2-a (HoSi 1.82 ), HoSi 2-b (HoSi 1.67 ), Ho 3 Si 4 , and HoSi from solid components are determined by measuring electromotive forces between 710 and 930 K. The thermodynamic functions of formation of HoSi 1.67 and Ho 3 Si 4 from individual components are determined for the first time.The phase equilibria in holmium-silicon alloys over the entire range of compositions have been examined with metallography, x-ray diffraction, and differential thermal analysis [1][2][3][4]. It has been established that -b disilicides form with different degrees of silicon lattice imperfection and crystal structures. The two disilicides form peritectically: HoSi 2-a at 1290°C and HoSi 2-b at 1620°C. The Ho 4 Si 5 silicide forms peritectoidally from two solid phases (HoSi and HoSi 2-b ) at 1305°C.With 50 at.% Si, FeB-type orthorhombic holmium monosilicide forms, which melts congruently at 1860°C.Note that the composition and ranges in which holmium disilicide phase exists still have to be completely determined. In this paper, we accept the conclusion [5] that the homogeneity range of HoSi 2-b at 1000°C is within HoSi 1.67-1.60 , which tends to HoSi 1.67 with decreasing temperature. According to [2], the other HoSi 2-a disilicide also has a small homogeneity range rich in silicon with the boundary at HoSi 1.82 . The composition of another silicon-rich holmium silicide, which is referred to as "Ho 4 Si 5 " in [1][2][3][4], has been ascertained in [6] and defined as Ho 3 Si 4 and its own structural type has been established. The lattice parameters of Ho 4 Si 5 determined in [1-4] and those of Ho 3 Si 4 reported in [6] agree well with each other. The solubility of holmium in solid silicon is very low (<1 at.%).The data on the thermodynamic properties of holmium-silicon alloys are limited to the standard formation enthalpies of HoSi 2-a (a = 0), HoSi, and Ho 5 Si 3 [7] and mixing enthalpies of Ho-Si over a range of diluted solutions (0 ≤ x ≤ 0.4) at 1827 K [8,9]. There are also calorimetric data on the standard enthalpy and entropy of HoSi 2-b (b = 0.33) [10] and on the temperature dependences of its enthalpy, entropy, and reduced Gibbs energy between 298. 15 and 2007 K [11].

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“…4 , and Y 5 (Si x Ge 1-x ) 4 Only a limited amount of well-established experimented data exist for the R 5 (Si x Ge 1-x ) 4 phases for R = Pr, Ho, Er, Tm, and Y; these includes phase diagrams, and magnetic, electronic, and thermodynamic properties. [46][47][48][49][50][51][52][53][54][55][56][57].…”

Section: Previous Work On R 5 (Si X Gementioning

confidence: 99%

Magnetic, Caloric and Crystallographic Properties of Dy5(SixGe1-x)4 Alloys

Ivchenko

2002

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Phase diagram of the holmium-silicon binary system and physical properties of holmium silicides up to 1050 °C

Cited by 34 publications

References 11 publications

Tin Whisker Growth on the Surface of Sn-0.7Cu Lead-Free Solder with a Rare Earth (Nd) Addition

Tin Whisker Growth on the Surface of Sn-0.7Cu Lead-Free Solder with a Rare Earth (Nd) Addition

Thermodynamic properties of silicon-rich holmium silicides

Magnetic, Caloric and Crystallographic Properties of Dy<sub>5</sub>(Si<sub>x</sub>Ge<sub>1-x</sub>)<sub>4</sub> Alloys

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