Phase diagram of the Cu2Te  Ga2Te3 system and semiconducting properties of Cu2Ga4Te7

Congiu, A.; Garbato, L.; Manca, P.

doi:10.1016/0025-5408(73)90007-x

Cited by 38 publications

(20 citation statements)

References 15 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…The lattice parameters calculated from the XRD patterns are summarized in Table 1, together with the literature data. 7,8,1014) The lattice parameters obtained in the present study are almost identical with those reported in the literatures. The bulk densities of the hot-press samples are also summarized in the table.…”

Section: Resultssupporting

confidence: 89%

Effect of the Amount of Vacancies on the Thermoelectric Properties of Cu–Ga–Te Ternary Compounds

et al. 2012

View full text Add to dashboard Cite

The CuGaTe ternary compounds: Cu 3 Ga 5 Te 9 , Cu 2 Ga 4 Te 7 , CuGa 3 Te 5 , CuGa 5 Te 8 , and CuGaTe 2 have zinc-blende or chalcopyrite structure. The compounds except for CuGaTe 2 contain vacancies in the cation site due to the valence mismatch between cation and anion, and the vacancy concentration is different between these compounds. Here we investigated the effect of the amount of vacancies on the thermoelectric (TE) properties of the CuGaTe ternary compounds. At room temperature, the presence of vacancies reduced the Hall mobility (® H ) and the lattice thermal conductivity (¬ lat ), showing that the vacancies scattered both carriers and phonons. It was found that the decreasing rate of the ® H was larger than that of the ¬ lat . Therefore, the presence of vacancies degraded the TE performance of the CuGaTe ternary compounds. In other words, CuGaTe 2 without vacancies would show the best TE figure of merit. The room temperature ZT values for Cu 3 Ga 5 Te 9 , Cu 2 Ga 4 Te 7 , CuGa 3 Te 5 , CuGa 5 Te 8 , and CuGaTe 2 were 2.0 © 10 ¹2

show abstract

Section: Resultssupporting

confidence: 89%

Effect of the Amount of Vacancies on the Thermoelectric Properties of Cu–Ga–Te Ternary Compounds

et al. 2012

View full text Add to dashboard Cite

show abstract

“…The DTA thermograms are in agreement with the phase diagram results reported by Congiu et al 4 and Quintero et al 9 The results show that that good fits of E g against T data, determined by utilizing either the extrapolation of (αhν) 2 = 0 or the continuum term, can be obtained using the Manoogian-Leclerc equation with x = 2/3 or 1. However, it is found that using the values of E g vs T gotten from the continuum term, with the parameter x taken as unity, yields the best fit to the experimental points.…”

Section: Discussionsupporting

confidence: 86%

“…The DTA thermogram of the sample slowly cooled to room temperature is shown in Fig. 1, these results are in good agreement with those reported by Congiu et al 4 for CuGaTe 2 in the Cu 2 Te-Ga 2 Te 3 phase diagram.…”

Section: Preparation and Characterization Of Materialssupporting

confidence: 93%

“…The phase diagram of this compound was studied by Belova 3 and also by Congiu. 4 The lattice thermal expansion in this material over the temperature range 80 to 650K was determined by Bodnar and Orlova. 5 The specific heat and Debye temperature were reported by Bohmhammel et al 6 Hörig et al 7 investigated the electrical and optical properties using single crystal samples of this material.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Temperature variation of optical energy gap values of the compound CuGaTe2

Rivero

Quintero

Power

et al. 1997

Journal of Elec Materi

View full text Add to dashboard Cite

Measurements of optical absorption in the temperature range 20 to 300K were made on polycrstalline samples of the compound CuGaTe 2 . These results were used to determine values of the optical energy gap E g as a function of temperature T. The resulting curves of E g vs T were fitted to a simplified Manoogian-Leclerc equation and the fitted coefficients used to give values of (dE g /dT) 1 and (dE g /dT) 2 , due to lattice dilation and electron-phonon contributions, respectively. Hence, the deformation potentials of the valence and conduction bands were estimated for the present compound.

show abstract

“…Sudah banyak diteliti bahwa bahan ini mempunyai nilai koefisien absorbsi yang cukup tinggi [2][3][4]. Salah satu material (I-III-VI 2 ) yang cukup banyak diteliti [5][6][7][8] adalah CuInSe 2 dan mempunyai effisiensi yang relatif tinggi yaitu 14,8 %. Pembuatan material (I-III-VI 2 ) ini relatif mudah dan murah.…”

Section: Pendahuluanunclassified

SIFAT OPTIK PADA FABRIKASI POLIKRISTAL AgGaSe2

Soepardjo¹,

Janusetiawan²

2010

MST

View full text Add to dashboard Cite

AbstrakPolikristal AgGaSe 2 adalah senyawa (I-III-VI 2 ) suatu semikonduktor sebagai bahan dasar pembuatan lapisan tipis (thin film) untuk sel surya. Polikristal tersebut telah berhasil ditumbuhkan dengan metoda tungku Bridgmann tegak, dengan memanaskan sampai temperatut 850°C kemudian didinginkan perlahan-lahan sampai temperatur kamar. Hasil yang didapatkan berupa ingot (batangan) dengan panjang lebih kurang 3 cm dan diameter 13 mm. Dengan menggunakan XRay Refraction didapatkan komposisi masing masing unsur berat % adalah Ag = 29,3996 %, Ga = 36,8123 % dan Se = 30,29 % sedangkan pengukuran dengan X-Ray Difraction didapatkan parameter kisinya dihitung a = 4,4112 Å, c = 8, 8854 Å dan c/a = 2,01426. AbstractOptic Properties on AgGaSe 2 Polycristal Fabrication. Polycristal AgGaSe 2 , is compound (I-III-VI 2 ) a semiconductor as basic material for thin film for solar cell. Polycristal was succesfully grown using Bridgmann Method, heated on sequential temperature treatment until 850°C and cooled down slowly until room temperature. Results observed were in the form of ingot (bars) with more or less 3 cm length and 13 mm in diameter. By using X-Ray Fefraction, composition obtained of each element (weight %) was Ag = 29,3996 %, Ga = 36,8123 % and Se = 30,29 % while using X-Ray Difraction lattice parameter obtained/calculated a = 4,4112 Å, c = 8,8854 Å, and c/a = 2,01426.

show abstract

Phase diagram of the Cu2Te  Ga2Te3 system and semiconducting properties of Cu2Ga4Te7

Cited by 38 publications

References 15 publications

Effect of the Amount of Vacancies on the Thermoelectric Properties of Cu–Ga–Te Ternary Compounds

Effect of the Amount of Vacancies on the Thermoelectric Properties of Cu–Ga–Te Ternary Compounds

Temperature variation of optical energy gap values of the compound CuGaTe2

SIFAT OPTIK PADA FABRIKASI POLIKRISTAL AgGaSe2

Contact Info

Product

Resources

About

Phase diagram of the Cu2Te  Ga2Te3 system and semiconducting properties of Cu2Ga4Te7

Cited by 38 publications

References 15 publications

Effect of the Amount of Vacancies on the Thermoelectric Properties of Cu&ndash;Ga&ndash;Te Ternary Compounds

Effect of the Amount of Vacancies on the Thermoelectric Properties of Cu&ndash;Ga&ndash;Te Ternary Compounds

Temperature variation of optical energy gap values of the compound CuGaTe2

SIFAT OPTIK PADA FABRIKASI POLIKRISTAL AgGaSe2

Contact Info

Product

Resources

About

Effect of the Amount of Vacancies on the Thermoelectric Properties of Cu–Ga–Te Ternary Compounds

Effect of the Amount of Vacancies on the Thermoelectric Properties of Cu–Ga–Te Ternary Compounds