1996
DOI: 10.1016/0925-8388(95)01977-4
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Phase diagram of the binary erbium-silicon system and physical properties of erbium silicides up to 1050°C

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Cited by 28 publications
(12 citation statements)
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“…Considering the full occupancy of all sites, 31 we conclude that Er 5 Si 4 is a stoichiometric compound, and despite small weight losses observed during the arc melting, the evaporation of the Er metal was substantial enough to shift the as-prepared Er 5 Si 4 alloy into the ErSi 1−x +Er 5 Si 4 twophase region of the Er-Si phase diagram. 29 Consistent with this conclusion, is the x-ray powder diffraction pattern (not shown) of the stoichiometric Er 5 Si 4 prepared using the Bridgman technique, from now on called sample III, indicating a single phase alloy because evaporative losses from a sealed crucible were indeed negligible. Its unit cell dimensions (Table I) deviate from those of both arc-melted materials by no more than two standard deviations, i.e., the differences in the unit cell dimensions of the three different Er 5 Si 4 samples, are statistically insignificant.…”
Section: Alloy Preparation and Characterizationsupporting
confidence: 64%
“…Considering the full occupancy of all sites, 31 we conclude that Er 5 Si 4 is a stoichiometric compound, and despite small weight losses observed during the arc melting, the evaporation of the Er metal was substantial enough to shift the as-prepared Er 5 Si 4 alloy into the ErSi 1−x +Er 5 Si 4 twophase region of the Er-Si phase diagram. 29 Consistent with this conclusion, is the x-ray powder diffraction pattern (not shown) of the stoichiometric Er 5 Si 4 prepared using the Bridgman technique, from now on called sample III, indicating a single phase alloy because evaporative losses from a sealed crucible were indeed negligible. Its unit cell dimensions (Table I) deviate from those of both arc-melted materials by no more than two standard deviations, i.e., the differences in the unit cell dimensions of the three different Er 5 Si 4 samples, are statistically insignificant.…”
Section: Alloy Preparation and Characterizationsupporting
confidence: 64%
“…In the Gd 5 Si 4 -type structure, which is the room-temperature polymorph for the Er 5 Si 4 , the partially covalent T -T bonds exist between all of the slabs, while in the Gd 5 Si 2 Ge 2 -type structure (M), 24 which is the low-temperature form of Er 5 Si 4 , 18,19 one half of these bonds are much longer, and therefore, weaker. The lattice is monoclinically distorted, and microscopic twinning has been observed in Er 5 Si 4 single crystal. 19 For a phase to adopt the Sm 5 Ge 4 -type of structure (O-II), all of the interslab T -T bonds must be broken, 24 which was not observed in Er 5 Si 4 .…”
Section: Introductionmentioning
confidence: 97%
“…The lattice is monoclinically distorted, and microscopic twinning has been observed in Er 5 Si 4 single crystal. 19 For a phase to adopt the Sm 5 Ge 4 -type of structure (O-II), all of the interslab T -T bonds must be broken, 24 which was not observed in Er 5 Si 4 .…”
Section: Introductionmentioning
confidence: 97%
“…According to the phase diagram published in 1996, 16 in the Er-Si system 5:3 and 5:4 phases exist as adjacent line compounds (Fig. 5).…”
Section: B Composition Effectsmentioning
confidence: 99%