Phase diagram, growth and spectral properties of Nd3+:GdMg(BO2)5 crystal

Fan, Junmei; Lin, Zhoubin; Zhang, Lizhen; Wang, Guofu

doi:10.1016/j.jallcom.2006.07.054

Cited by 12 publications

(2 citation statements)

References 6 publications

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“…The thermal conductivity was determined by the equation κ = λρCp, where κ, λ, ρ, Cp denote thermal conductivity, thermal diffusion coefficient, density and specific heat of the Er:Yb:GMB crystal, respectively. The ρ is 4.290 g/cm 3 [18]. The values of thermal conductivity of the Er:Yb:GMB crystal versus temperature were calculated and shown in Figure 4.…”

Section: Resultsmentioning

confidence: 99%

Thermal, Spectral and Laser Properties of Er3+:Yb3+:GdMgB5O10: A New Crystal for 1.5 μm Lasers

et al. 2017

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A novel laser crystal of Er3+:Yb3+:GdMgB5O10 with dimension of 26 × 16 × 12 mm3 was grown successfully from K2Mo3O10 flux by the top seeded solution growth method. The thermal diffusivity and specific heat capacity were measured to calculate the thermal conductivity of the crystal. The absorption and fluorescence properties of the crystal at room temperature were investigated in detail. The Judd-Ofelt method was used to analyze the polarized absorption spectra. The emission cross-section of the 4I13/2→4I15/2 transition was calculated by the Füchtbauer-Ladenburg formula and the relevant gain cross-sections were estimated. Continuous-wave laser output of 140 mW at 1569 nm with the slope efficiency of 17.8% was demonstrated in a plano-concave resonator. The results reveal that Er3+:Yb3+:GdMgB5O10 crystal is a promising material for 1.5 μm lasers.

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Section: Resultsmentioning

confidence: 99%

Thermal, Spectral and Laser Properties of Er3+:Yb3+:GdMgB5O10: A New Crystal for 1.5 μm Lasers

et al. 2017

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“…With the development of the solid-state laser with diode laserpumped, research on more efficient Nd 3+ -doped crystal materials is gaining more interest. [1][2][3][4][5][6][7][8] Since the output wavelength of diode laser is increased at 0.2$0.3 nm C À1 with the operating temperature of the laser device, the temperature stability of the output wavelength of the diode-laser is needed to be crucially controlled. Therefore, the absorption band of laser crystals close to the laser output of AlGaAs diode-laser (lz808 nm) needs to have a large full-width at half-maximum (FWHM).…”

Section: Introductionmentioning

confidence: 99%