Phase Diagram Equilibria In2Se3–Sb2Se3 Crystal Growth of the β-In2Se3 Phase (In1.94Sb0.06Se3)

Topological phase transitions in (Bi1−xInx)2SeLiu1, Vanderbilt2 2013Phys. Rev. B

“…We find that there is almost a gap closure, E g 0.15 eV, much smaller than the experimental value of 1.34 eV. 40 Our small gap clearly results from a low-lying conduction band at L that is dominantly of In 5s character. For the C 0.5 and C 0.75 cases, these states get folded and mixed with other conduction-band states in such a way as to cause the metallic behavior observed in our supercell calculations.…”

“…Therefore, the magnitude of the shift is not important for computing the topological properties, as long as it is large enough to prevent the In 5s levels from interfering. In any case, since the β phase of In 2 Se 3 is not very stable at room temperature (it has to be stabilized by doping small amounts of Sb), 40 a direct comparison between the experimental and theoretical band gaps is not very meaningful. Therefore, we adopt the procedure here of applying the 0.79 eV shift of In 5s levels in all of our Insubstituted supercell calculations.…”

Growth of γ-In2Se3 films on Si substrates by metal-organic chemical vapor deposition with different temperatures

“…It may be due to the doping effect of carbon given by the metal-organic precursor of TMI previously. The doping effect of carbon may be the same as that of the Sb reported before [4]. Eventually, as the film was grown at over 450 1C, a more complicated structure was presented.…”

“…It has a five-layers arrangement of Se-In-Se-In-Se linked by weak van der Waals force with a stacking sequence of ABC [3]. b-In 2 Se 3 is a metastable structure obtained by heating a-In 2 Se 3 and it will transform back to a-In 2 Se 3 at room temperature unless it is doped with Sb, which makes it stable even though the heating is terminated [4]. g-In 2 Se 3 is a defective wurtzite structure, and in order to satisfy the octet rule for sp 3 , one-third of the sites are vacant and form screw arrays along the c-axis [5].…”

Thermal Decomposition and Kinetic Parameter of Bridgeman- Grown In2Se3-xSbx (x= 0.3) Single Crystals

“…This type of transition observed by Skoog et al [17] and concluded to that crystal formation is responsible for the first exothermic peak. Also, author has observed small second exothermic reaction at 391.13 0 C which correspond to oxidation [17][18][19][20] of the material with chemical reaction. Due to air atmosphere this peak material adsorption the O2 molecule from the atmospheres.…”