Phase-controlled large-area growth of MoTe2 and MoTe2-xOx/MoTe2 heterostructures for tunable memristive behavior

Reconfigurable carrier type and photodetection of MoTe2 of various thicknesses by deep ultraviolet light illumination

“…[15][16][17][18][19] In addition, MoTe 2 has shown great potential in applications, such as chemical sensors, memristors, and photodetectors. [20][21][22] The thicker hexagonal structure of MoTe 2 has a bandgap of 0.88 eV, whereas its mono-layer exhibits a direct bandgap of almost 1.1 eV. 23,24 The narrow bandgap also enables a huge tunneling current and a high on-off ratio of MoTe 2 FETs.…”

Lateral layered semiconductor multijunctions for novel electronic devices

“…For example, the MX 2 /MO d heterostructure has been studied as a favorable material for the conductive channels in memristors. 113,114 Recently, Liu's group demonstrated a directlaser-writing oxidation technique to synthesize monolayer MoS 2 / MoS 2Àx O d heterojunctions for memristive synaptic devices. 115 Fabricated as an FET, the device showed a high resistance state (HRS) and low resistance state (LRS) in one cycle (Fig.…”

Two‐Dimensional Metal Telluride Atomic Crystals: Preparation, Physical Properties, and Applications

“…Figure 10f exhibits the performance of 2H‐MoTe 2 ‐based resistive RAM, which demonstrated an obvious memristive behavior with the arrows showing the sweep directions. Our group [ 247 ] also developed the MoTe 2‐ x O x /MoTe 2 heterostructures that exhibit a stable and excellent memristive behavior for ≈3000 cycles. These findings indicate that It is feasible to realize controlled switching of electronic states in 2D materials and highlights the potential of 2D MTACs in memory applications.…”