Phase control of group-velocity-based biexciton coherence in a multiple quantum well nanostructure

Abstract

A double cascade-type four-level multiple-quantum-well-based exciton-biexciton transitions are proposed. The study is carried out on a 4.8-nm ZnSe single-quantum well which is embedded into ZnMgSSe cladding layers and pseudomorphically grown by molecular beam epitaxy on a (0 0 1) GaAs substrate. It is displayed that the exciton spin relaxation and relative phases between applied fields can influence the transient and steady-state behaviors of absorption, dispersion, and group velocity of two weak probe and signal fields. Also, transient behaviors of electron population of different levels are discussed. It is found that the probe or signal amplification occurs in the absence of population inversion.

Optimizing effective phase modulation in coupled double quantum well Mach–Zehnder modulators

“…Along with the renovation and advancement of modern nanotechnology, nanometer quantum devices, such as quantum-well modulators and lasers based on nonlinear optical effects in semiconductor nanostructures, have attracted extensive interest. [1][2][3][4][5] One reason is that there is very large optical nonlinearity in semiconductor nanostructures due to quantum-size effects and quantum-confinement effects of carriers in low-dimensional quantum systems, which is a significant property for nonlinear optical application. [6][7][8][9] Their optical nonlinearity can be controlled by structural parameters or applied electromagnetic fields.…”