Phase constitution and element distribution in Cu-In-S based absorber layers grown by the CISCuT-process

Winkler, Michael; Tober, O.; Penndorf, J.; Szulzewsky, K.; Roser, Dennis C.; Lippold, G.; Otte, Karsten

doi:10.1016/s0040-6090(99)00818-4

Cited by 19 publications

(6 citation statements)

References 11 publications

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“…Similar data have been obtained by Winkler et al 11 from the Raman scattering and structural analysis of Cu-In-Sbased layers. In this work, in-depth Raman spectra were measured from samples beveled by ion etching, and the observed blueshift of the A 1 mode in the region where the CuIn 5 S 8 phase is detected was attributed to built-in internal FIG.…”

Section: Discussionsupporting

confidence: 86%

Microstructure and secondary phases in coevaporated CuInS2 films: Dependence on growth temperature and chemical composition

Álvarez-Garcı́a

Pérez-Rodrı́guez

Romano‐Rodríguez

et al. 2001

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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The microstructure of CuInS 2 ͑CIS 2 ) polycrystalline films deposited onto Mo-coated glass has been analyzed by Raman scattering, Auger electron spectroscopy ͑AES͒, transmission electron microscopy, and x-ray diffraction techniques. Samples were obtained by a coevaporation procedure that allows different Cu-to-In composition ratios ͑from Cu-rich to Cu-poor films͒. Films were grown at different temperatures between 370 and 520°C. The combination of micro-Raman and AES techniques onto Ar ϩ -sputtered samples has allowed us to identify the main secondary phases from Cu-poor films such as CuIn 5 S 8 ͑at the central region of the layer͒ and MoS 2 ͑at the CIS 2 /Mo interface͒. For Cu-rich films, secondary phases are CuS at the surface of as-grown layers and MoS 2 at the CIS 2 /Mo interface. The lower intensity of the MoS 2 modes from the Raman spectra measured at these samples suggests excess Cu to inhibit MoS 2 interface formation. Decreasing the temperature of deposition to 420°C leads to an inhibition in observing these secondary phases. This inhibition is also accompanied by a significant broadening and blueshift of the main A 1 Raman mode from CIS 2 , as well as by an increase in the contribution of an additional mode at about 305 cm Ϫ1 . The experimental data suggest that these effects are related to a decrease in structural quality of the CIS 2 films obtained under low-temperature deposition conditions, which are likely connected to the inhibition in the measured spectra of secondary-phase vibrational modes.

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Section: Discussionsupporting

confidence: 86%

Microstructure and secondary phases in coevaporated CuInS2 films: Dependence on growth temperature and chemical composition

Álvarez-Garcı́a

Pérez-Rodrı́guez

Romano‐Rodríguez

et al. 2001

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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“…They are an order of magnitude lower in intensity than the A1‐mode and barely above the noise. The absence of the Raman peak at 362 cm −1 corresponding to the A1 mode of the In‐rich spinel CuIn 5 S 8 phase 7 is in accordance with the initially implied single chalcopyrite CuInS 2 structure of the investigated samples.…”

Section: Resultssupporting

confidence: 85%

“…Indeed, the presence of the CuAu‐ordered phase has been already confirmed by TEM 6 and Raman observations 4, 6 in CuInS 2 (CuInSe 2 ) thin films grown on Mo‐coated float glass. A phonon band at 308 cm −1 was also observed in the early‐generation CISCuT‐grown absorber films, although at that time it was not correctly identified as CA phase 7.…”

Section: Resultsmentioning

confidence: 99%

Combined Raman‐DLTS investigations of n‐type Cu–In–S absorber layers grown on Cu tape substrate (CISCuT)

Trushin

Arguirov

Kittler

et al. 2012

Physica Status Solidi (a)

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Thin absorber films grown by the CuInS 2 -on-Cu-tape (CISCuT) method were studied by Raman spectroscopy and deep-level transient spectroscopy (DLTS). Raman measurements revealed a degradation of crystalline quality and a growth of the CuAu fraction with the increase of Cu-tape velocity through the sulfur chamber, whereas DLTS method -corresponding variations in the magnitude of the dominating peak E1. The origin of the E1 peak was established from the correlation of Raman and DLTS results and ascribed to defect states at the interface between chalcopyrite and CuAu phase.

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“…It turned out, that the very short heat treatment time, not achievable with any other contemporary CIS technology, makes it possible to create a spontaneous layered structure (so-called "as grown" cell, in this paper referred to as "absorber") during a single sulphurisation/heat treatment step, with properties suitable for light energy conversion. Winkler et al [3] have shown that the structure of the absorber consists of one top and two bottom CuInS 2 layers (CIS layers) and a CuIn 5 S 8 middle layer. Further, a p-CuI buffer layer and ZnO window layers improve the light conversion efficiency up to 5 %.…”

Section: Introductionmentioning

confidence: 99%

“…Further, a p-CuI buffer layer and ZnO window layers improve the light conversion efficiency up to 5 %. The structure of the cell is supposed to be known in this paper ( Figure 1, [3][4][5]). Here, its electronic properties are of interest.…”

Section: Introductionmentioning

confidence: 99%

Electronic Properties of Cu-In-S Solar Cells on Cu-Tape Substrate

et al. 2001

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Thin film solar cells obtained by the "CIS on copper tape" technique are investigated. This technique promises a high throughput capability, but the efficiency of the cells is still about 5 % only. The model of the band structure of the absorber has been introduced into the model of the whole cell. Parameters of the model were determined experimentally by use of quantitative EBIC profiling, C-V doping profiling, Hall measurements, and AFM. The structure has been simulated using SCAPS-1D software. Results of the simulation show a good correlation to the measured I-V and DSR data of the cell. The benefits and drawbacks of the cell structure as well as factors limiting its efficiency are discussed.

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Phase constitution and element distribution in Cu-In-S based absorber layers grown by the CISCuT-process

Cited by 19 publications

References 11 publications

Microstructure and secondary phases in coevaporated CuInS2 films: Dependence on growth temperature and chemical composition

Microstructure and secondary phases in coevaporated CuInS2 films: Dependence on growth temperature and chemical composition

Combined Raman‐DLTS investigations of n‐type Cu–In–S absorber layers grown on Cu tape substrate (CISCuT)

Electronic Properties of Cu-In-S Solar Cells on Cu-Tape Substrate

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