Phase composition of the buried silicon interlayers in the amorphous multilayer nanostructures [(Co₄₅Fe₄₅Zr₁₀)/a‐Si:H]₄₁ and [(Co₄₅Fe₄₅Zr₁₀)₃₅(Al₂O₃)₆₅/a‐Si:H]₄₁

Abstract

We consider two amorphous multilayer nanostructures (MLNS) [(Co 45 Fe 45 Zr 10 )/a-Si: H] 41 -I and [(Co 45 Fe 45 Zr 10 ) 35 (Al 2 O 3 ) 65 /a-Si:H] 41 -II that were obtained by ion-beam sputtering. For determination of the phase composition of the buried amorphous silicon interlayers in these MLNS, we used nondestructive ultrasoft X-ray emission spectroscopy technique (USXES). The use of the USXES enables to register the silicon Si L 2,3 -spectra providing the information about the local partial densities of Si s and d occupied states of silicon valence band in silicon-contained materials. According to the simulation and fitting procedure to the experimental data, Fe 3 Si and a small amount of oxide (SiO 2 :H) were found in the interlayer of MLNS-I. At the same time, the content of silicon dioxides (SiO 2 ) decrease from surface layers to the deep ones. On the other hand, simulation of the phase composition of MLNS-II reveals the presence of the silicides Fe 3 Si and Co 2 Si, oxides SiO 2 and SiO 1.3 , and a small amount of a-Si:H. The percentage of cobalt silicide Co 2 Si and suboxide SiO 1.3 increased in the deep layers of the MLNS-II. KEYWORDS interfaces, ion-beam sputtering, multilayer nanostructures, silicides of 3d metals, silicon oxides, ultrasoft X-ray emission spectroscopy

Влияние Слабого Импульсного Электромагнитного Поля На Атомное Строение Природных Алюмосиликатов Клиноптилолита, Монтмориллонита И Палыгорскита

“…Before irradiation After irradiation PDF 2012 00-039-1383 Clinoptillolite-Ca [ and energies of up to several hundred electron volts, measured from the zero Fermi level. In this case, the distribution of the spectrum intensity of each element carries information on the local density of valence states near atoms of a given sort [10][11][12][13]. Sensitivity to changes in the chemical environment of the radiating atom is an advantage of X-ray emission spectroscopy.…”

“…By changes of the XEVB fi ne structure, one can judge the change in the nearest environment, which allows not only elemental, but even phase analysis of the samples [14,15]. And since in the study of REP the transition is used the valence bande-core level transitions, the advantage of the UMRES method is the relative simplicity of interpreting the compared to optical band-band spectra [10][11][12][13].…”

Фазовый состав, морфология, оптические и электронные характеристики наноразмерных пленок AlN, выращенных на подложках GaAs(100) с разориентацией

“…Метод УМРЭС дает информацию об энергетическом распределении электронных состояний в валентной зоне (ВЗ), при этом позволяет исследовать как кристаллические, так и аморфные объекты. Возбуждение рентгеновского спектра Al L 2.3 осуществлялось пучком электронов, при ускоряющем напряжении 3 кВ, что соответствует глубине анализируемого слоя, равного 60 нм [24]. Для разложения характеристического рентгеновского излучения в спектр использовалась дифракционная решетка типа " эшелетт" с радиусом R = 1995 мм, имеющая 600 штрих/мм.…”

The state of individual layers and interfaces in multilayer nanostructures [(Co40Fe40B20)34(SiO2)66/ZnO/C]46

“…Therefore, the study of the composition and morphology of multilayer nanostructures is very relevant for spintronic applications. Our previous work showed a decrease in periods of superstructure relative to the nominal values due to the interfacial interactions on the surface and interfaces of MLs with metal‐containing composite layers (Co 45 Fe 45 Zr 10 ) 35 (Al 2 O 3 ) 65 6,7 …”