Phase composition and microstructure of In3S4 and CuInS2 films grown on silicon by spray pyrolysis

Сергеева, А. В.; Наумов, А. В.; Семенов, В. Н.; Sokolov, Yu. V.

doi:10.1134/s0020168507100032

Cited by 7 publications

(4 citation statements)

References 3 publications

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“…This leads to the formation of NiS 2 as well as In 3 S 4 around the Sn:In 2 O 3 . We do not observe In 2 S 3 which melts incongruently at 418 °C to form In 3 S 4 and S . So far, we have considered the structural properties of the Sn:In 2 O 3 /NiS 2 NWs obtained on i-Si(001), since the latter is not altered in a detrimental way by its reaction with H 2 S. However, this is not true of the Ni foils which react strongly with H 2 S, leading to the formation of NiS 2 on top of Ni.…”

Section: Resultsmentioning

confidence: 91%

Sn:In₂O₃ and Sn:In₂O₃/NiS₂ Core–Shell Nanowires on Ni, Mo Foils and C Fibers for H₂ and O₂ Generation

et al. 2017

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Sn:In2O3 nanowires have been grown by the vapor liquid solid mechanism on Si, Ni, Mo, and C fibers. These were used to obtain Sn:In2O3/NiS2 core–shell nanowires by the deposition of 10 nm Ni over the Sn:In2O3 nanowires followed by post growth processing under H2S between 100 and 200 °C. The Sn:In2O3/NiS2 nanowires have diameters of ≈100 nm and lengths up to ≈100 μm and consist of cubic bixbyite Sn:In2O3 surrounded by 3 nm NiS2 crystalline quantum dots with a cubic crystal structure. Higher temperatures of 300–500 °C result in the formation of NiS2 quantum dots and cubic In3S4 branches around the Sn:In2O3. We find that the p-type NiS2 in contact with n-type Sn:In2O3 NWs gives rectifying current–voltage (IV) characteristics due to the formation of a p–n heterojunction with a straddling type band alignment where electrons are confined to the n-type Sn:In2O3 core and holes in the p-type NiS2, as shown by self-consistent Poisson–Schrödinger calculations in the effective mass approximation. The gas evolution of O2 and H2 was measured using the Sn:In2O3/NiS2 nanowires as the anode and Pt as the cathode in a two-compartment photoelectrochemical cell containing 1 M KOH (aq) and 0.5 M H2SO4 (aq), respectively, under light of 1 sun. We obtain 7.8 μL/min of O2 and 15.0 μL/min of H2 at an overpotential of 0.2 V and 25 °C from the Sn:In2O3/NiS2 nanowires on C. These are ≈35% larger than those obtained from plain Sn:In2O3 nanowires attributed to the existence of the p–n junction.

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Section: Resultsmentioning

confidence: 91%

Sn:In₂O₃ and Sn:In₂O₃/NiS₂ Core–Shell Nanowires on Ni, Mo Foils and C Fibers for H₂ and O₂ Generation

et al. 2017

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“…Fabrication methods to afford β ‐In 2 S 3 thin films and nanoparticles can employ either multiple‐source or single‐source molecular precursors (SSPs). Since control over phase is a common challenge to both routes, the former is usually chosen due to compatibility with various synthetic approaches such as chemical bath deposition, , and spray pyrolysis . However, a variety of In(III) complexes as SSPs for the preparation of β ‐In 2 S 3 and related nanostructures have been explored.…”

Section: Introductionmentioning

confidence: 99%

Important Phase Control of Indium Sulfide Nanomaterials by Choice of Indium(III) Xanthate Precursor and Thermolysis Temperature

et al. 2019

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Four In(III) xanthate complexes, [In(S2COR)3] where R = Me, Et, iPr and sBu, respectively, were synthesized, characterized and subsequently used as single source molecular precursors via a solventless thermolysis route to obtain indium sulfide materials. By choice of precursor and reaction temperature crystalline powders of tetragonal In2S3, cubic In2S3 and cubic In2.77S4 were acquired. The phase identification and purity were conducted through examination of the experimental powder X‐ray diffraction patterns relative to the simulated patterns for single X‐ray crystal diffraction.

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“…Spray pyrolysis has drawn a lot interest as a technique because of its potential to deposit over a large-area, ambient operating environment and relatively low cost. It has been successfully applied in the synthesis of functional materials such as SnO 2 , 9 ZnO, 10 CuInS 2 , 11 MnIn x S 4 12 etc. Spray pyrolysis can also be used to yield gold nanoparticles 13 and pattern inorganic substrates.…”

Section: Introductionmentioning

confidence: 99%

Low temperature synthesis of wurtzite zinc sulfide (ZnS) thin films by chemical spray pyrolysis

Zeng

Pramana

Batabyal

et al. 2013

Phys. Chem. Chem. Phys.

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Zinc sulfide (ZnS) thin films have been synthesized by spray pyrolysis at 310 °C using an aqueous solution of zinc chloride (ZnCl2) and thioacetamide (TAA). Highly crystalline films were obtained by applying TAA instead of thiourea (TU) as the sulfur source. X-ray diffraction (XRD) analyses show that the films prepared by TAA contained a wurtzite structure, which is usually a high temperature phase of ZnS. The crystallinity and morphology of the ZnS films appeared to have a strong dependence on the spray rate as well. The asymmetric polar structure of the TAA molecule is proposed to be the intrinsic reason of the formation of highly crystalline ZnS at comparatively low temperatures. The violet and green emissions from photoluminescence (PL) spectroscopy reflected the sulfur and zinc vacancies in the film. Accordingly, the photodetectors fabricated using these films exhibit excellent response to green and red photons of 525 nm and 650 nm respectively, though the band gaps of the materials, estimated from optical absorption spectroscopy, are in the range of 3.5-3.6 eV.

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Phase composition and microstructure of In3S4 and CuInS2 films grown on silicon by spray pyrolysis

Cited by 7 publications

References 3 publications

Sn:In₂O₃ and Sn:In₂O₃/NiS₂ Core–Shell Nanowires on Ni, Mo Foils and C Fibers for H₂ and O₂ Generation

Sn:In₂O₃ and Sn:In₂O₃/NiS₂ Core–Shell Nanowires on Ni, Mo Foils and C Fibers for H₂ and O₂ Generation

Important Phase Control of Indium Sulfide Nanomaterials by Choice of Indium(III) Xanthate Precursor and Thermolysis Temperature

Low temperature synthesis of wurtzite zinc sulfide (ZnS) thin films by chemical spray pyrolysis

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Phase composition and microstructure of In3S4 and CuInS2 films grown on silicon by spray pyrolysis

Cited by 7 publications

References 3 publications

Sn:In2O3 and Sn:In2O3/NiS2 Core–Shell Nanowires on Ni, Mo Foils and C Fibers for H2 and O2 Generation

Sn:In2O3 and Sn:In2O3/NiS2 Core–Shell Nanowires on Ni, Mo Foils and C Fibers for H2 and O2 Generation

Important Phase Control of Indium Sulfide Nanomaterials by Choice of Indium(III) Xanthate Precursor and Thermolysis Temperature

Low temperature synthesis of wurtzite zinc sulfide (ZnS) thin films by chemical spray pyrolysis

Contact Info

Product

Resources

About

Sn:In₂O₃ and Sn:In₂O₃/NiS₂ Core–Shell Nanowires on Ni, Mo Foils and C Fibers for H₂ and O₂ Generation

Sn:In₂O₃ and Sn:In₂O₃/NiS₂ Core–Shell Nanowires on Ni, Mo Foils and C Fibers for H₂ and O₂ Generation