2021
DOI: 10.1103/physrevmaterials.5.084405
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Phase competition and negative piezoelectricity in interlayer-sliding ferroelectric ZrI2

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Cited by 25 publications
(15 citation statements)
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“…Recently, Wu et al proposed the concept of interfacial ferroelectricity in 2D van der Waals (vdW) materials, which could generate sizable out-of-plane dipole moments ( D z ) in multilayer forms that are non-ferroelectric in their monolayer counterparts. , The flipping of D z (between D false↑ and D false↓ ) can be done via a short distance shuffling or sliding between neighboring vdW layers. Hence, they are referred to as sliding ferroelectric (SFE) materials. Owing to the low energy barrier (∼0.1 μJ/cm 2 ) separating the D false↑ and D false↓ states, the flipping could occur in an ultrafast kinetics with high contrast. This motivates various experimental investigations after the theoretical predictions, and several SFEs have been demonstrated in h- BN and H/T′ phase of transition metal dichalcogenides, etc. , …”
Section: Geometric and Electronic Properties Of Msfesmentioning
confidence: 99%
See 1 more Smart Citation
“…Recently, Wu et al proposed the concept of interfacial ferroelectricity in 2D van der Waals (vdW) materials, which could generate sizable out-of-plane dipole moments ( D z ) in multilayer forms that are non-ferroelectric in their monolayer counterparts. , The flipping of D z (between D false↑ and D false↓ ) can be done via a short distance shuffling or sliding between neighboring vdW layers. Hence, they are referred to as sliding ferroelectric (SFE) materials. Owing to the low energy barrier (∼0.1 μJ/cm 2 ) separating the D false↑ and D false↓ states, the flipping could occur in an ultrafast kinetics with high contrast. This motivates various experimental investigations after the theoretical predictions, and several SFEs have been demonstrated in h- BN and H/T′ phase of transition metal dichalcogenides, etc. , …”
Section: Geometric and Electronic Properties Of Msfesmentioning
confidence: 99%
“…Hence, they are referred to as sliding ferroelectric (SFE) materials. [23][24][25][26] Owing to the low energy barrier (~0.1 μJ/cm 2 ) separating the 𝐷 ↑ and 𝐷 ↓ states, the flipping could occur in an ultrafast kinetics with high contrast. This motivates various experimental investigations after the theoretical predictions, and several SFEs have been demonstrated in h-BN, H and T′ phases of transition metal dichalcogenides, etc.…”
mentioning
confidence: 99%
“…It was also concluded that the internal strain contribution is responsible for the sign of the longitudinal piezoelectric coefficient. NLPE was recently predicted in interlayer-sliding ferroelectric ZrI 2 , 12 while NLPE arising from the negative ionic contribution was also predicted for the ferromagnetic 1H-LaBr 2 monolayer. 13 Interestingly, a majority of the aforementioned predictions and experimental demonstrations involve inorganic compounds.…”
Section: ■ Introductionmentioning
confidence: 79%
“…Since the first experimental discovery of ferroelectricity in Rochelle salt [1], in the past hundred years, for the perspective of application in sensors, actuators and memories, a wide range of ferroelectric (FE) materials have been intensively studied, such as the well known three dimensional (3D) BaTiO 3 [2]. Interest in new, lowdimensional ferroelectrics has also been growing rapidly due to their potential applications in electronics, such as recently emerged ferroelectric two-dimensional (2D) layered structures including group-VI monochalcogenides, In 2 Se 3 , CuInP 2 S 6 , etc [3][4][5][6][7][8][9][10][11][12][13][14][15][16]. Besides these intrinsic 2D FE materials, ferroelectricity can be also induced in non-FE 2D system through doping, manipulating defects and also fabricating heterojunctions.…”
Section: Introductionmentioning
confidence: 99%