Phase Change Memory

Jeyasingh, Rakesh; Ahn, Chang-Nam; Eryilmaz, Şükrü Burç; and, Scott Fong; Wong, H.-S. Philip

doi:10.1002/9781118958254.ch05

Cited by 3 publications

(3 citation statements)

References 110 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…So far, although transistors enable the most reliable array operations, V-RS selectors are of great promise for maximizing the density of integration. [20][21][22][23][24] There are various types of NV-RS memories based on a broad category of materials and physical mechanisms, [25] including phase change memories, [26][27][28][29][30] ferroelectric memories, [31][32][33] magnetoresistive memories, [34][35] valance change memories, [36][37][38] electrochemical (EC)-RS memories, [39] and so on. For V-RS selectors, nonlinear resistors such as Schottky diodes [40] and RS devices such as ovonic threshold switches (OTS), [41][42] Mott selectors, [43][44] EC-RS selectors, [45] and the mixed -ionic -electronic conduction type selectors [46] and field assisted superlinear threshold selectors based on undisclosed materials, [47] have gained considerable research interests.…”

Section: Introductionmentioning

confidence: 99%

A new opportunity for the emerging tellurium semiconductor: resistive switching device implementation

Yang

et al. 2021

Preprint

View full text Add to dashboard Cite

The electrochemical (EC) resistive switching (RS) cross-point arrays, composed of nonvolatile RS (NV-RS) memories and volatile RS (V-RS) selectors, hold promise for high-density data storage, in-memory computing and neuromorphic computing. However, the conventional EC-RS devices based on metallic filaments suffer from the notorious current-volatility dilemma that the low and high current requirements for NV-RS memories and V-RS selectors, respectively, cannot be satisfied simultaneously, due to the dominant EC nature of the RS. In this work, we demonstrate electrochemically active, low thermal-conductivity and low melting-temperature semiconducting tellurium filament-based RS devices that solve this dilemma, enabling NV-RS memories to operate under lower currents than do V-RS selectors. This novel phenomenon arises as the consequence of the adversarial EC and Joule heating (JH) effects. The devices also show unusual stimulus frequency dependent long-term plasticity (LTP)-to-short-term plasticity (STP) transition. Devices with this property can be generically utilized as spatial-temporal filters in spiking neural networks (SNNs) for high-performance event-based visual recognition tasks, as illustrated in our noise filtering simulations. By regulating the EC-JH relationship using dielectric materials with decreasing thermal conductivities, full functional-range tunable Te filament-based devices, from always-NV RS, to NV-to-V transitionable RS, and to always-V RS, are also demonstrated. The tellurium filament-based RS devices are promising enablers for functional cross-point arrays.

show abstract

Section: Introductionmentioning

confidence: 99%

A new opportunity for the emerging tellurium semiconductor: resistive switching device implementation

Yang

et al. 2021

Preprint

View full text Add to dashboard Cite

show abstract

“…Phase change memory (PCM) is one of the most promising new nonvolatile memory for its superior performance in writing speed, power consumption and scalability [1,2]. After years of research and development, PCM is approaching commercialization with new capabilities [3].…”

Section: Introductionmentioning

confidence: 99%

Optimization of driving current and crosstalk effect in epitaxial diode array for phase change memory application

Li¹,

Cai²,

Chen³

et al. 2020

Semicond. Sci. Technol.

View full text Add to dashboard Cite

In this paper, aiming at the consistency of driving current and the reliability of crosstalk current, we propose two methods to optimize the performance of the dual-trench epitaxial diode array for phase change memory (PCM), as well as the optimization calculation model. By inserting pickup and using the new bias scheme, we can improve the consistency of the diode arrays and reduce the impact of crosstalk current on the idle storage cell, respectively. The test results show that all the diodes in arrays, including 4F 2 in 40 nm process node, can provide a driving current of more than 900 µA at 2.7 V, after inserting pickups. With the new bias scheme, the maximum of the crosstalk ratio in the 12F 2 diode array can be reduced to less than 2%, which is proved has no effect on the idle PCM cell. Moreover, the optimization model is the basis of design and fabrication to improve the performance of the diode access PCM chip.

show abstract

“…Phase change memory (PCM), as a new non-volatile memory, offers significant advantages in terms of high capacity, high density, high speed, low power, low cost, and compatibility with complementary metal-oxide semiconductor (CMOS) process, is expected to become the next generation of mainstream storage technology [1,2]. A typical PCM cell has two indispensable components: phase change material and selector.…”

Section: Introductionmentioning

confidence: 99%

Analysis and optimization of read/write reliability for 12F ² cross-point ultra-fast phase change memory

Yang¹,

Chen²,

Cai³

et al. 2019

Semicond. Sci. Technol.

View full text Add to dashboard Cite

Phase change memory (PCM) device using a diode as selector exhibits a high level of integration based on 40 nm process, but it still has some reliability problems, such as read disturbance and writing performance. In this paper, we test and improve the read/write reliability of one diode and one resistor (1D1R) structure cell in array with cell size of 12F 2 (0.16 μm × 0.12 μm). The 1D1R device has good performance with ultra-high speed (20 ns) and low programming voltage (3.3 V). The cell programmed by current pulse has a better performance than that of voltage operation in amorphous state with respect to read disturb immunity. The ratio of reset/set resistance can be improved by choosing appropriate parameter of write operation. In addition, the endurance characteristics of the devices are investigated. The optimization in read/write operation guarantee that 1D1R device can satisfy the requirements for the high-speed and highdensity applications.

show abstract

Phase Change Memory

Cited by 3 publications

References 110 publications

A new opportunity for the emerging tellurium semiconductor: resistive switching device implementation

A new opportunity for the emerging tellurium semiconductor: resistive switching device implementation

Optimization of driving current and crosstalk effect in epitaxial diode array for phase change memory application

Analysis and optimization of read/write reliability for 12F ² cross-point ultra-fast phase change memory

Contact Info

Product

Resources

About

Phase Change Memory

Cited by 3 publications

References 110 publications

A new opportunity for the emerging tellurium semiconductor: resistive switching device implementation

A new opportunity for the emerging tellurium semiconductor: resistive switching device implementation

Optimization of driving current and crosstalk effect in epitaxial diode array for phase change memory application

Analysis and optimization of read/write reliability for 12F 2 cross-point ultra-fast phase change memory

Contact Info

Product

Resources

About

Analysis and optimization of read/write reliability for 12F ² cross-point ultra-fast phase change memory