Phase change memory

Li, Jing; Lam, C.

doi:10.1007/s11432-011-4223-x

Cited by 16 publications

(3 citation statements)

References 47 publications

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“…The existing non-volatile memory includes Flash memory (Flash), phase change memory (PCM), magnetic memory (MRAM), ferroelectric memory (FeRAM) and resistive memory (RRAM) [12][13][14][15][16][17] . PCM has the characteristics of fast read and write speed, high data density, long life, low power consumption, scalability and high reliability 18,19 . During the writing operation, the phase change material can be changed from amorphous to crystalline states by applying a weak current pulse.…”

Section: Introductionmentioning

confidence: 99%

Phase transition and electrical conversion properties of Ge/Sb nano-multilayer films on flexible substrates

Wang,

Hu,

2024

npj Flex Electron

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Flexible information memory is the key component of flexible electronic devices and the core of intelligent wearable devices. In this paper, Ge/Sb multilayer phase change films of various thickness ratios were prepared using polyether ether ketone as substrate, and their flexible phase change properties and device conversion characteristics were studied. After bending for 100000 times and bending experiments with different bending radius, the film can still realize the transition from amorphous to crystalline states, and the resistance fluctuation was small. Bending, stretching and pressing of the film resulted in grain refinement and increasing of crystalline resistance. The flexible electronic devices using Ge/Sb multilayer films were prepared. The phase change memory device can realize reversible conversion between SET and RESET states with different pulse widths in flat, bent states and after bending many times. All findings show that Ge/Sb multilayer films on PEEK substrate have broad application prospects in high-performance flexible memory in the future.

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Section: Introductionmentioning

confidence: 99%

Phase transition and electrical conversion properties of Ge/Sb nano-multilayer films on flexible substrates

Wang,

Hu,

2024

npj Flex Electron

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“…In recent years, flash-based SSD with large capacity has become more popular, which has the I/O performance advantage compared with HDD. At the same time, nonvolatile memory (NVM) [2], such as Phase Change Memory (PCM) [3], Shared Transistor Technology Random Access Memory (STT-RAM) [4], and the latest technology Intel 3D-Xpoint [5] and Intel Optane DC Persistent Memory [6], provides features such as byte-addressable, long life span, low dynamic energy consumption, and high I/O speed closing to Dynamic Random Access Memory (DRAM). en, a hybrid solid-state storage system with SSD and NVM can offer a possible way to solve the storage wall of time series data for IoT.…”

Section: Introductionmentioning

confidence: 99%

The Embedded IoT Time Series Database for Hybrid Solid-State Storage System

Cai

Liu

Niu

et al. 2021

Scientific Programming

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IoT time series data is an important form of big data. How to improve the efficiency of storage system is crucial for IoT time series database to store and manage massive IoT time series data from various IoT devices. Mixing NVM and SSD is an effective method to improve the I/O performance of storage systems. However, there are great differences between HDD and NVM or SSD. As a result, NVM and SSD cannot be directly used in the current time series database effectively. We design an IoT time series database with an embedded engine in storage device drivers for the hybrid solid-state storage system consisting of NVM and SSD. The I/O software stack of storing and managing IoT time series data can be shortened to improve the efficiency. Based upon the intrinsic characteristics of IoT time series data and different features of NVM and SSD, a redundancy elimination and compression fusion strategy, a hierarchical management strategy, and a heterogeneous time series data index are designed to improve the efficiency. Finally, a prototype of embedded IoT time series database named TS-NSM is implemented, and YCSB-TS is used to measure the IOPS. The results show that TS-NSM can improve the write IOPS up to 243.6 times and 174.3 times, respectively, compared with InfluxDB and OpenTSDB, and improve the read IOPS up to 10.1 times and 14.4 times, respectively.

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“…However, Dynamic Random Access Memory (DRAM) technologies are facing scalability problems in terms of density [4], [5] and power consumption [6]. Emerging Non-Volatile Memory (NVM) technologies, such as Phase Change Memory (PCM) [7], Resistive-switching RAM (ReRAM) [8] and Intel/Micron 3D XPoint [9] feature byte-addressability, persistence, high density, low cost per bit, near-zero standby power consumption [10]. They are expected to be a competitive replacement to DRAM.…”

Section: Introductionmentioning

confidence: 99%

Hotspot-Aware Hybrid Memory Management for In-Memory Key-Value Stores

Jin

Liu

et al. 2020

IEEE Trans. Parallel Distrib. Syst.

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Emerging Non-Volatile Memory (NVM) technologies promise much higher memory density and energy efficiency than DRAM, at the expense of higher read/write latency and limited write endurance. Hybrid memory systems composed of DRAM and NVM have the potential to provide very large capacity of main memory for in-memory key-value (K-V) stores. However, there remains challenges to directly deploy DRAM-based K-V stores in hybrid memory systems. The performance and energy efficiency of K-V stores on hybrid memory systems have not been fully explored yet. In this paper, we propose HMCached, an in-memory K-V store built on a hybrid DRAM/NVM system. HMCached utilizes an application-level data access counting mechanism to identify frequently-accessed (hotspot) objects (i.e., K-V pairs) in NVM, and migrates them to fast DRAM to reduce the costly NVM accesses. We also propose an NVM-friendly index structure to store the frequently-updated portion of object metadata in DRAM, and thus further mitigate the NVM accesses. Moreover, we propose a benefit-aware memory reassignment policy to address the slab calcification problem in slab-based K-V store systems, and significantly improve the benefit gain from the DRAM. We implement the proposed schemes with Memcached and evaluate it with Zipfian-like workloads. Experiment results show that HMCached significantly reduces NVM accesses by 70 percent compared to the vanilla Memcached running on a DRAM/NVM hybrid memory system without any optimizations, and improves application performance by up to 50 percent. Moreover, compared to a DRAM-only system, HMCached achieves 90 percent of performance and 46 percent reduction of energy consumption for realistic (read-intensive) workloads while significantly reducing the DRAM usage by 75 percent.

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Phase change memory

Cited by 16 publications

References 47 publications

Phase transition and electrical conversion properties of Ge/Sb nano-multilayer films on flexible substrates

Phase transition and electrical conversion properties of Ge/Sb nano-multilayer films on flexible substrates

The Embedded IoT Time Series Database for Hybrid Solid-State Storage System

Hotspot-Aware Hybrid Memory Management for In-Memory Key-Value Stores

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