Phase-Change Media for High-Numerical-Aperture and Blue-Wavelength Recording

Borg, Herman J.; Schijndel, M. van; Rijpers, J. C. N.; Lankhorst, Marc M.; Zhou, Guorong; Dekker, M.J.; Ubbens, Igolt P.D.; Kuijper, Maarten

doi:10.1143/jjap.40.1592

Cited by 100 publications

(55 citation statements)

References 9 publications

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“…[11][12][13][14] Among them doped alloys derived from "eutectic" Sb x Te, showing a growth-dominant crystallization behavior, appear the most obvious choice for both high data transfer rate and high-density recording. [15][16][17][18][19][20] These materials are currently used in optical disk formats including DVD+ RW, DVD-RW, Blu-ray disk, 21 and HD-DVD, 22 and are also proposed for the line concept PRAM. 23 A good trade-off between crystallization speed and data retention time is also expected in these materials, as they appear to have a high activation energy for crystallization.…”

Section: Influence Of Capping Layers On the Crystallization Of Doped mentioning

confidence: 99%

Influence of capping layers on the crystallization of doped SbxTe fast-growth phase-change films

Pandian

Kooi

Hosson

et al. 2006

Journal of Applied Physics

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Isothermal crystallization of doped Sb x Te fast-growth phase-change films, with and without capping layers, was investigated using transmission electron microscopy, which provided direct and quantitative information on nucleation and growth processes separately. Two types of amorphous dielectric layers, ZnS -SiO 2 and GeCrN, were used for sandwiching the Sb x Te films to form typical trilayer stacks, which are the active part in applications. The nucleation and growth parameters of Sb x Te films were found to be influenced by the dielectric capping layers. The crystal growth rate is temperature dependent and it reduces when the film is sandwiched between the dielectric layers. The reduction in growth rate differs with the capping layer type. The capping layer influence on the growth rate is pronounced at lower temperatures ϳ160°C, but tends to vanish at higher temperatures ϳ200°C. The activation energy for crystal growth is 2.4± 0.3 eV for an uncapped film and it increases ϳ40% when the capping layers, GeCrN or ZnS -SiO 2 , are added. A temperature and time dependent nucleation rate is found and it is accelerated ϳ1.7 times by GeCrN layers, whereas it is retarded ϳ5 times by ZnS -SiO 2 layers. The activation energy for crystal nucleation is 6.1± 0.4 eV for an uncapped film and it is not noticeably altered by the capping layers. These variations observed in the crystallization kinetics are attributed to variations in interface energy between the phase-change film and the capping layers or vacuum and the confinement effect by the capping layers on the phase-change film.

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Section: Influence Of Capping Layers On the Crystallization Of Doped mentioning

confidence: 99%

Influence of capping layers on the crystallization of doped SbxTe fast-growth phase-change films

Pandian

Kooi

Hosson

et al. 2006

Journal of Applied Physics

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“…For the DVR system data rates of over 100 Mbit/s are predicted for these doped Sb 2 Te alloys. In this context, it is interesting to note that we have already reported a data rate of 80 Mbit/s under DVR-blue recording conditions [5].…”

Section: Conventionalmentioning

confidence: 87%

“…Experimental data have confirmed this so-called spot-size effect ( Figure 5). These results indicate that doped eutectic Sb 2 Te materials are becoming increasingly attractive in higher-density storage systems based on short-wavelength lasers and high-numerical-aperture lenses, and therefore these materials form the basis for the current DVR media [4,5]. The experiments in Figure 5 were performed for the same phase-change composition and stack structure for the different laser spot sizes.…”

Section: High-speed Phase-change Recordingmentioning

confidence: 99%

Phase-Change Media for High-Density Optical Recording

et al. 2001

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Rewritable optical-storage systems are quickly gaining market share in audio, video and datastorage applications. The development of new rewritable optical-storage formats with higher capacity and data rate critically depends on innovations made to the recording media incorporating so-called phase-change materials. These materials allow reversible switching between a low and high reflective state induced by laser heating. In this paper, we highlight phase-change media aspects as optical and thermal design, sputter-deposition, materials optimization, and the development of new recording strategies. Focus is on the speed race in optical recording.

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“…Elemental Ge is considered to be effective in forming covalent bonds and reducing the atomic diffusivity which can provide sufficient amorphous stability [12]. Alloys containing Ge element are receiving the greatest attention in the nonvolatile memory device application called phase change random accesses memory (PCRAM) especially for (Ge 2 Sb 2 Te 5 ) based material systems [13][14][15]. Now days Ge-Sb-Te chalcogenide, which undergo phase transformations under the action of external stimuli, are of tremendous technological importance ranging from optical data storage to phase-change random access memory (PRAM), exhibiting the best performance for DVD-RAM in terms of speed and stability, Ge 2 Sb 2 Te 5 (hereafter GST) is also currently the most focused phase-change alloy [16-18].…”

Section: Introductionmentioning

confidence: 99%