The low bending stiffness of atomic
membranes from van
der Waals
ferroelectrics such as α-In2Se3 allow
access to a regime of strong coupling between electrical polarization
and mechanical deformation at extremely high strain gradients and
nanoscale curvatures. Here, we investigate the atomic structure and
polarization at bends in multilayer α-In2Se3 at high curvatures down to 0.3 nm utilizing atomic-resolution scanning
transmission electron microscopy, density functional theory, and piezoelectric
force microscopy. We find that bent α-In2Se3 produces two classes of structures: arcs, which form at bending
angles below ∼33°, and kinks, which form above ∼33°.
While arcs preserve the original polarization of the material, kinks
contain ferroelectric domain walls that reverse the out-of-plane polarization.
We show that these kinks stabilize ferroelectric domains that can
be extremely small, down to 2 atoms or ∼4 Å wide at their
narrowest point. Using DFT modeling and the theory of geometrically
necessary disclinations, we derive conditions for the formation of
kink-induced ferroelectric domain boundaries. Finally, we demonstrate
direct control over the ferroelectric polarization using templated
substrates to induce patterned micro- and nanoscale ferroelectric
domains with alternating polarization. Our results describe the electromechanical
coupling of α-In2Se3 at the highest limits
of curvature and demonstrate a strategy for nanoscale ferroelectric
domain patterning.