Perylenediimide-based distributed feedback lasers with holographic relief gratings on dichromated gelatine

Abstract

One dimensional second-order distributed feedback (DFB) lasers consisting of polystyrene (PS) films doped with a perylenediimide laser dye, deposited over dichromated gelatine (DCG) photoresist layers with solvent resistant relief gratings recorded by holographic lithography, are reported. The advantage of using the grating on DCG in the final device is that the fabrication process is simplified and the grating pattern better preserved, since no etching methods to transfer the grating to another substrate are needed. A very simple model, proposed to explain the experimental waveguide properties, has allowed identifying the waveguide mode at which DFB emission appears, which was the key to optimize the device performance. In the frame of this model, the thickness of the PS and DCG films could be adjusted in order to minimize the laser threshold and to control its wavelength tuneability. The performance of these lasers is comparable to that of recently reported devices based on the same active material, but deposited over high-quality DFB gratings engraved on SiO 2 by nanoimprint lithography.a Author to whom correspondence should be addressed. Electronic mail: maria.diaz@ua.es 2

1,7‐Bay‐Substituted Perylenediimide Derivative with Outstanding Laser Performance

“…with gratings over a DCG layer used as substrate) based on an u-PDI derivative. [7] The device showed a photostability halflife of around 7 min (4200 pump pulses) under constant excitation at around 4 times above its threshold. This value is in accordance with previous ASE measurements [see Overall, this work widens the use of PDIs in laser applications, up to now restricted to bayunsubstituted u-PDIs (all with ASE emission at around 580 nm), by including 1,7-bay bulky substituents in the PDI core.…”

“…[1] Up to now, all reported perylenediimide-based lasers are made of PDIs without substituents at the bay positions (denoted here as u-PDIs, with "u" accounting for bayunsubstituted ), [6][7][8] as a consequence of previous studies on the amplified spontaneous emission (ASE) properties of waveguides containing perylene derivatives with different chemical structures (e.g. imide, anhydride), which concluded that u-PDIs had the best performance.…”

“…The successful performance of this type of DFB geometry (with the photoresist layer with the grating directly used as the substrate of the device) for u-PDI-based lasers has been just reported. [7] One advantage of such type of devices is that the fabrication process is simple and the obtained gratings are highly resistant to organic solvents, so they can be reused multiple times. The particular active film thickness value used in the device was chosen in order to obtain DFB emission associated to the fundamental transverse electric (TE 0 ) waveguide mode, helped by experimental waveguide characterization using the m-line technique [13] and modelling, [14] and at a wavelength close to the ASE wavelength (see Fig.…”

Современное Состояние Разработки Светочувствительных Сред Для Голографии (Обзор)

“…Они остаются привлекательными для изготовления ГОЭ, особенно больших размеров, ис-пользуемых в частности для изготовления селективных концентраторов фотовольтаических и фотохимических преобразователей солнечной энергии [9]. Слои бихромированной желатины, содержащие нит-рат серебра, оказались пригодными для получения голо-графическим методом фотонных кристаллов, допирован-ных серебром [10], изготовления рельефных голографи-ческих решеток, используемых в лазерах с распределен-ной обратной связью [11].…”

Solution-processable, photo-stable, low-threshold, and broadly tunable thin film organic lasers based on novel high-performing laser dyes

“…Resonators for geometry (c) devices, based on either dichromated gelatine (DCG) or dichromated poly(vinyl alcohol) (DCPVA) photoresist layers deposited over FS, were fabricated as previously described. 21,22 Resonators for geometry (a) devices were prepared by thermal-NIL and subsequent etching on either FS or SiO 2 layers grown by thermal oxidation of silicon wafers, 23 or by HL and etching on glass.…”