A functionalization of microstructures of polyhedral oligomeric silsesquioxane (POSS) to obtain substrates contain N‐moieties, with a probable high selectivity of primary mines is demonstrated for the first time in a low pressure plasma process through a sequential continuous wave plus pulsed mode (CW + P). Selective grafting of N‐moieties was performed across octa‐methyl POSS micro‐powder by substituting hydrogen atoms of the terminal methyl groups during nitrogen/hydrogen (N2/H2) gases plasma. As opposed to wet chemical functionalization approaches, the plasma method does not require reactive chemicals and is environmentally friendly. The results demonstrate the efficiency of the treatment (N/Si) reaches 7.1% with an indication of high NH2 selectivity (NH2/N). The amount of primary amines is determined from XPS data after 4‐(trifluoromethyl) benzaldehyde (TFBA) chemical derivatization.